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Technical content

Features

  • Shielded Gate MOSFET Technology
  • 50% Lower Qrr than Other MOSFET Suppliers
  • Lowers Switching Noise/EMI
  • Low Profile − 0.5 mm in MicroFET 2x2 mm
  • 100% UIL Tested
  • These Devices are Pb−Free and are RoHS Compliant Typical Applications
  • Primary DC−DC MOSFET
  • Synchronous Rectifier in DC−DC and AC−DC
  • Motor Drive MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 120 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) TA = 25°C ID 4.5 A Power Dissipation (Note 1) TA = 25°C PD 2.1 W Power Dissipation (Note 2) TA = 25°C PD 0.62 W Pulsed Drain Current (Note 3) TA = 25°C IDM 51 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 4 A) (Note 4) EAS 8.0 mJ Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance Junction−to−Ambient (Note 1) R/C0113JA 60 °C/W Thermal Resistance Junction−to−Ambient (Note 2) R/C0113JA 200 °C/W 1. Surface mounted on a FR −4 board using 1 in2 pad of 2 oz copper. 2. Surface mounted on a FR −4 board using the minimum recommended pad of 2 oz copper. 3. Pulsed ID please refer to Figure 11 SOA graph for more details. 4. E AS of 8 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 4 A, VDD = 120 V, VGS = 10 V. 5. ESD Rating: HBM = 250 V (Class 1A), CDM = 1500 V (Class C5). www.onsemi.com V(BR)DSS RDS(on) MAX I D MAX 120 V 50.6 m/C0087 @ 10 V 4.5 A UDFN6 (2 X 2) CASE 517DZ MARKING DIAGRAM (Note: Microdot may be in either location) N−CHANNEL MOSFET See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

70 m/C0087 @ 4.5 V 5L = Specific Device Code M = One Digit Date Code /C0071= Pb−Free Package 5L M/C0071 /C0071 175 m/C0087 @ 2.5 V

www.onsemi.com ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 /C0109A 120 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 /C0109A, referenced to 25°C 39 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 96 V, TJ = 25°C 1.0 /C0109A Gate−to−Source Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±100 nA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 29 /C0109A 0.5 1.0 1.5 V Gate Threshold Temperature Coefficient VGS(TH)/TJ VGS = VDS, ID = 29 /C0109A, referenced to 25°C −4.61 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 5 A, TJ = 25°C 43.6 50.6 m/C0087 VGS = 4.5 V, ID = 4 A, TJ = 25°C 52.5 70 m/C0087 VGS = 2.5 V, ID = 1.5 A, TJ = 25°C 73 175 m/C0087 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz VDS = 60 V 552 pF Output Capacitance COSS 184 Reverse Transfer Capacitance CRSS 1.5 Gate−Resistance RG 1.1 3.0 /C0087 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 60 V, ID = 5 A 8.8 nC 4.5 V Gate Charge QG(4.5V) 4.1 2.5 V Gate Charge QG(2.5V) 2.3 Gate−to−Source Charge QGS 1.1 Gate−to−Drain Charge QGD 0.8 Output Charge QOSS VGS = 0 V, VDD = 60 V 16 nC Total Gate Charge Sync QSYNC VDS = 0 V, VGS = 0 ~ 10 V 8.3 nC RESISTIVE SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time td(on) VGS = 10 V, VDS = 60 V, ID = 5 A, RG = 6 /C0087 3.4 ns Rise Time tr 2.8 Turn−Off Delay Time td(off) 20.3 Fall Time tf 2.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 5 A, TJ = 25°C 0.87 1.2 V Reverse Recovery Time tRR IF = 5 A, dIs/dt = 300 A//C0109s 30 ns Reverse Recovery Charge QRR 73 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse test: pulse width ≤ 300 /C0109s, duty ratio ≤ 2%. 7. Switching characteristics are independent of operating junction temperature

Figure 13. Junction−to−Ambient Transient Thermal Response Curve Specifications Brochure, BRD8011/D.

www.onsemi.com PACKAGE DIMENSIONS UDFN6 2x2, 0.65P CASE 517DZ ISSUE A d d d f j j m j m

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