STL90N10F7 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 PowerFLAT™ 5x6 type R package information
  • 4.2 PowerFLAT™ 5x6 packing information
  • 5 Revision history

Features

Order code VDS RDS(on) max. ID PTOT STL90N10F7 100 V 0.008 Ω 70 A 100 W

  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness

Applications

  • Switching applications

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT™ 5x6 Tape and reel PowerFLAT™ 5x6

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 70 A ID (1) Drain current (continuous) at TC= 100 °C 50 A ID (2) Drain current (continuous) at Tpcb = 25 °C 16 A ID (2) Drain current (continuous) at Tpcb= 100 °C 11 A IDM (1)(3) Drain current (pulsed) 280 A IDM (2)(3) Drain current (pulsed) 64 A PTOT (1) Total dissipation at TC = 25 °C 100 W PTOT (2) Total dissipation at Tpcb = 25 °C 5 W EAS (4) Single pulse avalanche energy 300 mJ Tstg Storage temperature - 55 to 175 °C Tj Maximum junction temperature 175 °C Notes: (1) This value is rated according to Rthj-c. (2) This value is rated according to Rthj-pcb. (3) Pulse width is limited by safe operating area. (4) Starting Tj = 25 °C, ID = 10 A, VDD = 50 V. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 31 Notes: (1)When mounted on 1 inch², 2 Oz. Cu FR-4 board

2 Electrical characteristics

(TC= 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA 100 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 100 V 1 µA VGS = 0 V, VDS = 100 V, Tc = 125 °C 100 µA IGSS Gate-body leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 3.5 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 8 A 0.007 0.008 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS= 50 V, f = 1 MHz, VGS = 0 V - 3100 4030 pF Coss Output capacitance - 700 910 pF Crss Reverse transfer capacitance - 45 58 pF Qg Total gate charge VDD = 50 V, ID = 16 A, VGS = 10 V (see Figure 14: "Gate charge test circuit") - 45 60 nC Qgs Gate-source charge - 18 nC Qgd Gate-drain charge - 13 nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 50 V, ID = 8 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform") - 19 - ns tr Rise time - 32 - ns td(off) Turn-off-delay time - 36 - ns tf Fall time - 13 - ns

Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 16 A ISDM (1) Source-drain current (pulsed) 64 A VSD (2) Forward on voltage VGS = 0 V, ISD = 16 A - 1.1 V trr Reverse recovery time ISD = 16 A, di/dt = 100 A/µs, VDD = 80 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 70 90 ns Qrr Reverse recovery charge - 125 nC IRRM Reverse recovery current - 3.6 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance

3 Test circuits

Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform AM01469v1 VDD 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V Vi ≤ VGS 2200 μF PW I G = CONST 100 Ω 100 nF D.U.T. VG AM01470v1 A D D.U.T. S B G A A B B RG G FAST DIODE D S L=100 µH µF 3.3 1000 µF VDDΩ D.U.T. V(B R)DS S VDDVDD VD IDM ID AM01472v1 AM01473v10 VGS 90% VDS ton 90% 10% 90% 10% td(on) tr t td(off) tf 10% off

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 PowerFLAT™ 5x6 type R package information

Figure 19: PowerFLAT™ 5x6 type R package outline

Table 8: PowerFLAT™ 5x6 type R mechanical data Dim. mm Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 0.25 b 0.30 0.50 D 5.00 5.20 5.40 E 5.95 6.15 6.35 D2 4.11 4.31 e 1.27 L 0.60 0.80 K 1.275 1.575 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 Figure 20: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)

4.2 PowerFLAT™ 5x6 packing information

Figure 21: PowerFLAT™ 5x6 tape (dimensions are in mm) Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape Measured from centerline of sprocket hole to centerline of pocket. Cumulative tolerance of 10 sprocket holes is ± 0.20 . Measured from centerline of sprocket hole to centerline of pocket. (I) (II) (III) 2.0±0.1 (I) Bo (5.30±0.1) Ko (1.20±0.1) ±0.05) Ø1.5 MIN. Ø1.55±0.05 P Ao(6.30±0.1) F(5.50±0.1)(III) W(12.00±0.3) 1.75±0.1 4.0±0.1 (II) P 0 Y Y SECTION Y-Y CL P1(8.00±0.1) Do (0.30 T REF.R0.50 REF 0.20 Base and bulk quantity 3000 pcs 8234350_Tape_rev_C

Figure 23: PowerFLAT™ 5x6 reel

5 Revision history

Table 9: Document revision history Date Revision Changes 16-Apr-2013 1 First release. 06-Mar-2014 2 – Modified: RDS(on) value in cover page – Modified: VGS(th) values in Table 4 – Modified: RDS(on) typ. and max values in Table 4 – Modified: typical values in Table 5, 6 and 7 – Updated: Section 4: Package mechanical data – Added: Section 2.1: Electrical characteristics (curves) – Updated: Section 4: Package mechanical data – Document status promoted from preliminary data to production data 16-Dec-2014 3 – Updated title, features and description in cover page. – Updated RDS(on) values and Figure 7: Static drain-source onresistance. 17-Mar-2015 4 –Text edits throughout document –Updated cover page title description –Updated cover page features table –In table 2. Absolute maximum ratings, added "EAS" information and footnote 4 –In table 3. Thermal data, added footnote 1 –Renamed table 4. Static (was On/off states) –Updated table 5. Dynamic –Updated table 7. Source drain diode –In Section 2.1 Electrical characteristics (curves), updated figures 2, 3, 10 and 11 –Updated and renamed Section 4 Package information