STL70N10F3 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 17

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

■ Improved die-to-footprint ratio ■ Very low thermal resistance ■ Low on-resistance

Applications

■ Switching applications

Description

This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on- resistance and gate charge to provide superior switching performance. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. The value is rated according to R thj-c.
  2. The value is rated according to R thj-pcb.
  3. Pulse width limited by safe operating area.

Table 3. Thermal resistance

  1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec

Table 4. Avalanche data

2 Electrical characteristics

Table 5. On/off states Table 6. Dynamic Table 7. Switching times

Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration=300µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics up to Figure 5. Output characteristics up to Figure 6. Transfer characteristics Figure 7. Static drain-source on-resistance

180 VDS=2V

Figure 8. Gate charge vs. gate-source Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs. Figure 12. Normalized B VDSS vs temperature Figure 13. Source-drain diode forward

4 ISD(A)

3 Test circuits

Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

4 Package mechanical data

Table 9. PowerFLAT™ 5x6 type C-B mechanical data

Figure 20. PowerFLAT™ 5x6 type C-B drawing

Table 10. PowerFLAT™ 5x6 type S-C mechanical data

Figure 21. PowerFLAT™ 5x6 type S-C mechanical data

Figure 22. PowerFLAT™ 5x6 recommended footprint (dimensions in mm)

5 Packaging mechanical data

Figure 23. PowerFLAT™ 5x6 tape Figure 24. PowerFLAT™ 5x6 package orientation in carrier tape. hole to centerline of pocket.

Figure 25. PowerFLAT™ 5x6 reel

6 Revision history

Table 11. Document revision history 02-Dec-2011 1 First release. 13-Jan-2012 2 R DS(on) values have been changed (see Table 5: On/off states). 29-May-2012 3 Document status promoted from preliminary data to production data.