STL6N2VH5 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Very low switching gate charge ■ Very low thermal resistance ■ Conduction losses reduced ■ Switching losses reduced ■ 2.5 V gate drive ■ Very low threshold device

Applications

■ Switching applications

Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. The value is rated according R thj-pcb
  2. Pulse width limited by safe operating area.

Table 3. Thermal resistance

  1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec

2 Electrical characteristics

Table 4. On/off states Table 5. Dynamic Table 6. Switching times

Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration=300µs, duty cycle 1.5%

3 Test circuits

Figure 2. Switching times test circuit for Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. Unclamped inductive load test Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 8. PowerFLAT™ 2x2 mechanical data

Figure 8. PowerFLAT™ 2 x 2 drawing

Figure 9. PowerFLAT™ 2 x 2 recommended footprint (dimensions in millimeters)

5 Revision history

Table 9. Document revision history 24-Apr-2012 1 First release.