STL45N60DM6 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 PowerFLAT 8x8 HV package information
  • 4.2 PowerFLAT 8x8 HV packing information

Features

Order code VDS RDS(on) max. ID STL45N60DM6 600 V 0.110 Ω 25 A

  • Fast-recovery body diode
  • Lower R DS(on) per area vs previous generation
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Applications

  • Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STL45N60DM6 Product summary Order code STL45N60DM6 Marking 45N60DM6 Package PowerFLAT™ 8x8 HV Packing Tape and reel N-channel 600 V, 0.094 Ω typ., 25 A, MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package STL45N60DM6 Datasheet DS11670 - Rev 5 - July 2020 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width is limited by safe operating area.

Table 2. Thermal data

  1. When mounted on FR-4 board of 1 inch², 2oz Cu.

Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified Table 4. On/off states

  1. Defined by design, not subject to production test.

Table 5. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times Figure 18. Switching time

Electrical characteristics

Table 7. Source drain diode

  1. Pulse width is limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 PowerFLAT 8x8 HV package information

Figure 19. PowerFLAT 8x8 HV package outline

Package information

Table 8. PowerFLAT 8x8 HV mechanical data Figure 20. PowerFLAT 8x8 HV footprint Note: All dimensions are in millimeters.

4.2 PowerFLAT 8x8 HV packing information

Figure 21. PowerFLAT 8x8 HV tape Note: All dimensions are in millimeters. Figure 22. PowerFLAT 8x8 HV package orientation in carrier tape

Figure 23. PowerFLAT 8x8 HV reel Note: All dimensions are in millimeters.

Revision history

Table 9. Document revision history 27-May-2016 1 First release. Modified title and features in cover page. Added Section 2.1: "Electrical characteristics (curves)". Removed maturity status indication from cover page. Updated features on cover page. onresistance and Figure 11. Source-drain diode forward characteristics. HV package orientation in carrier tape.