STL42PLLF6 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 16
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package mechanical data
- 4.1 PowerFLAT™ 5x6 type R package information
- 4.2 PowerFLAT™ 5x6 packing information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID STL42P6LLF6 -60 V 26 mΩ -42 A Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STL42P6LLF6 42P6LLF6 PowerFLAT™ 5x6 Tape and reel
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage -60 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C -42 A ID(1) Drain current (continuous) at TC = 100 °C -30 A ID(1)(3) Drain current (pulsed) -168 A ID(2) Drain current (continuous) at Tpcb= 25 °C -9 A ID(2) Drain current (continuous) at Tpcb= 100 °C -6.6 A IDM(2)(3) Drain current (pulsed) -36 A PTOT(1) Total dissipation at TC = 25 °C 100 W PTOT(2) Total dissipation at Tpcb= 25 °C 4.8 W Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range Notes: (1)The value is rated by Rthj-case. (2)The value is rated by Rthj-pcb. (3)Pulse width is limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.5 °C/W Rthj-pcb(1) Thermal resistance junction-pcb max 31.3 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2 Oz Cu, t < 10 s.
2 Electrical characteristics
(TC= 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = -250 µA -60 V IDSS Zero gate voltage Drain current VGS = 0 V, VDS = -60 V -1 µA VGS = 0 V, VDS = -60 V, TC = 125 °C(1) -10 µA IGSS Gate-body leakage current VDS = 0 V, VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = -250 µA -1 -2.5 V RDS(on) Static drain-source on- resistance VGS = -10 V, ID = -4.5 A 23 26 mΩ VGS = -4.5 V, ID= -4.5 A 28 34 Notes: (1)Defined by design, not subject to production testing Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = -25 V, f = 1 MHz, VGS = 0 V - 3780 - pF Coss Output capacitance - 262 - pF Crss Reverse transfer capacitance - 170 - pF Qg Total gate charge VDD = -30 V, ID = -9 A, VGS = -4.5 V (see Figure 14: "Gate charge test circuit") - 30 - nC Qgs Gate-source charge - 10.8 - nC Qgd Gate-drain charge - 10.5 - nC RG Gate input resistance ID = 0 A, f = 1 MHz - 1.7 - Ω Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = -30 V, ID = -4.5 A, RG = 4.7 Ω, VGS = -10 V (see Figure 13: "Switching times test circuit for resistive load") - 51.4 - ns tr Rise time - 39 - ns td(off) Turn-off-delay time - 171 - ns tf Fall time - 21 - ns
Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - -42 A ISDM(1) Source-drain current (pulsed) - -168 A VSD (2) Forward on voltage VGS = 0 V, ISD = -9 A - -1.1 V trr Reverse recovery time ISD = -9 A, di/dt = 100 A/µs, VDD = -4.8 V, Tj = 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 34 ns Qrr Reverse recovery charge - 48 nC IRRM Reverse recovery current - -2.8 A Notes: (1)Pulse width limited by safe operating area (2)Pulse test: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 12: Source-drain diode forward characteristics
3 Test circuits
Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 PowerFLAT™ 5x6 type R package information
Figure 16: PowerFLAT™ 5x6 type R package outline A0ER_8231817_Rev14
Table 8: PowerFLAT™ 5x6 type R mechanical data Dim. mm Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 0.25 b 0.30 0.50 C 5.80 6.00 6.20 D 5.00 5.20 5.40 D2 4.15 4.45 D3 4.05 4.20 4.35 D4 4.80 5.00 5.20 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 e 1.27 E 5.95 6.15 6.35 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.75 0.90 1.05 K 1.275 1.575 L 0.60 0.80 L1 0.05 0.15 0.25 θ 0° 12° Figure 17: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm) 8231817_FOOTPRINT_simp_Rev_14
4.2 PowerFLAT™ 5x6 packing information
Figure 18: PowerFLAT™ 5x6 tape (dimensions are in mm) Figure 19: PowerFLAT™ 5x6 package orientation in carrier tape
Figure 20: PowerFLAT™ 5x6 reel
5 Revision history
Table 9: Document revision history Date Revision Changes 28-Oct-2013 1 First release. 25-Aug-2014 2 Modified: Figure 1: "Internal schematic diagram" Updated: Section 10: "Package mechanical data" Minor text changes 24-Feb-2015 3 In title description on cover page, changed 0.02 Ω to 0.023 Ω In features table on cover page, changed 0.028 Ω to 0.026 Ω Updated Table 2: Absolute maximum ratings Updated Table 4: Static – renamed table and updated Static drain- source on-resistance values Updated Table 5: Dynamic – test conditions and all typical values Updated Table 6: Switching times – test conditions and all typical values Updated Table 7: Source-drain diode – test conditions and all typical values Added Section 2.2: Electrical characteristics (curves) Updated Section 4: Package mechanical data Minor text changes 15-Nov-2016 4 Updated title, features table and description on cover page Updated Table 2: "Absolute maximum ratings" Updated Table 4: "Static", Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source drain diode" Updated Figure 9: "Normalized on-resistance vs. temperature" Updated Section 4.1: "PowerFLAT™ 5x6 type R package information" Minor text changes