STL300N4LF8 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Package information
- 3.1 PowerFLAT 5x6 type B package information
- 3.2 PowerFLAT 5x6 packing information
- 3.3 PowerFLAT 5x6 marking information
Features
Order code VDS RDS(on) max. ID STL300N4LF8 40 V 1.0 mΩ 304 A
- MSL1 grade
- 175 °C maximum operating junction temperature
- 100% avalanche tested
- Low gate charge Qg
Applications
- Industrial tools, motor drives and equipment
- Industrial motor control
- Power supplies and converters
Description
The STL300N4LF8 is a 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. PowerFLAT 5x6 GADG09062022 5678 1 2 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) Product status link STL300N4LF8 Product summary Order code STL300N4LF8 Marking(1) 300N4LF8 Package PowerFLAT 5x6 Packing Tape and reel 1. For engineering samples marking, see Section 3.3: PowerFLAT 5x6 marking information. N-channel logic level 40 V, 1.0 mΩ max., 304 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package STL300N4LF8 Datasheet DS14228 - Rev 2 - April 2024 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings (at TC = 25 °C unless otherwise specified)
- Specified by design, not tested in production.
- This is the theoretical current value only related to the silicon.
- This current value is limited by package.
- Pulse width is limited by safe operating area.
Table 2. Thermal data
- Defined according to JEDEC standards (JESD51-5, -7).
2 Electrical characteristics
TJ = 25 °C unless otherwise specified. Table 3. On/off states
- Specified by design and evaluated by characterization, not tested in production.
Table 4. Dynamic
- Specified by design and evaluated by characterization, not tested in production.
Table 5. Switching times
- Specified by design and evaluated by characterization, not tested in production.
Electrical characteristics
Table 6. Source-drain diode
- Specified by design and evaluated by characterization, not tested in production.
- This is the theoretical current value only related to the silicon.
2.1 Electrical characteristics (curves)
Figure 1. Total power dissipation Figure 2. Drain current vs case temperature Figure 3. Safe operating area Figure 4. Normalized transient thermal impedance Figure 5. Avalanche characteristics Figure 6. Avalanche energy
3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
3.1 PowerFLAT 5x6 type B package information
Figure 17. PowerFLAT 5x6 type B package outline
Package information
Table 7. PowerFLAT 5x6 type B mechanical data
Figure 18. PowerFLAT 5x6 recommended footprint (dimensions are in mm)
3.2 PowerFLAT 5x6 packing information
Figure 19. PowerFLAT 5x6 tape (dimensions are in mm) DS14228 - Rev 2 page 10/15
3.3 PowerFLAT 5x6 marking information
Figure 22. PowerFLAT 5x6 marking information production and/or in reliability qualification trials. Commercial Samples: fully qualified parts from ST standard production with no usage restrictions. DS14228 - Rev 2 page 12/15
Revision history
Table 8. Document revision history 03-Feb-2023 1 Initial release. Updated Features, Applications and Description. Section 2.1: Electrical characteristics (curves). Figure 15. Typical gate charge characteristics and Figure 16. Typical capacitance characteristics .
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