STL22N60M6 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 PowerFLAT™ 5x6 HV package information
- 4.2 PowerFLAT™ 5x6 packing information
Features
Order code VDS RDS(on) max. ID STL22N60M6 600 V 250 mΩ 10 A
- Reduced switching losses
- Lower R DS(on) per area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
- LLC converters
- Boost PFC converters
Description
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STL22N60M6 Product summary Order code STL22N60M6 Marking 22N60M6 Package PowerFLAT™ 5x6 HV Packing Tape and reel N-channel 600 V, 220 mΩ typ., 10 A, MDmesh™ M6 Power MOSFET in a PowerFLAT™ 5x6 HV package STL22N60M6 Datasheet DS12833 - Rev 1 - November 2018 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data
- When mounted on 1 inch2 FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified). Table 4. On/off states
- Defined by design, not subject to production test.
Table 5. Dynamic
- C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 18. Switching time
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance
3 Test circuits
Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. STL22N60M6
Package information
4.1 PowerFLAT™ 5x6 HV package information
Figure 19. PowerFLAT™ 5x6 HV package outline
Table 8. PowerFLAT™ 5x6 HV mechanical data Figure 20. PowerFLAT™ 5x6 HV recommended footprint (dimensions are in mm)
4.2 PowerFLAT™ 5x6 packing information
Figure 21. PowerFLAT™ 5x6 tape (dimensions are in mm) Figure 22. PowerFLAT™ 5x6 package orientation in carrier tape
Figure 23. PowerFLAT™ 5x6 reel
Revision history
Table 9. Document revision history 16-Nov-2018 1 First release.