STL200N45LF7 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 14
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 PowerFLAT™ 5x6 type C package information
- 4.2 PowerFLAT™ 5x6 packing information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID STL200N45LF7 45 V 1.8 mΩ 120 A Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL200N45LF7 200N45F7 PowerFLAT™ 5x6 Tape and reel
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 45 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 120 A ID(1) Drain current (continuous) at TC = 100 °C 120 A IDM(1)(2) Drain current (pulsed) 480 A ID(3) Drain current (continuous) at Tpcb = 25 °C 36 A ID(3) Drain current (continuous) at Tpcb = 100 °C 25.7 A IDM(2)(3) Drain current (pulsed) 144 A PTOT(1) Total dissipation at TC = 25 °C 150 W PTOT(3) Total dissipation at Tpcb = 25 °C 4.8 W Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range Notes: (1)This value is rated according to Rthj-case and limited by package (2)Pulse width limited by safe operating area (3)This value is rated according to Rthj-pcb Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1 °C/W Rthj-pcb(1) Thermal resistance junction-pcb 31.3 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2 oz Cu
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 4: On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA 45 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 45 V 1 µA IGSS Gate body leakage current VDS = 0, VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1.2 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 18 A 1.4 1.8 mΩ VGS = 4.5 V, ID = 18 A 2 2.5 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 5170 - pF Coss Output capacitance - 1190 - pF Crss Reverse transfer capacitance - 68 - pF Rg Intrinsic gate resistance f = 1 MHz, ID = 0 A 0.5 0.9 2 Ω Qg Total gate charge VDD = 22.5 V, ID = 36 A VGS= 4.5 V, see Figure 14: "Test circuit for gate charge behavior" - 33 - nC Qgs Gate-source charge - 15 - nC Qgd Gate-drain charge - 10 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD= 22.5 V, ID = 18 A, RG = 4.7 Ω VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 25 - ns tr Rise time - 6 - ns td(off) Turn-off delay time - 58 - ns tf Fall time - 7 - ns
Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage ISD = 36 A, VGS = 0 V - 1.1 V trr Reverse recovery time ID = 36 A, di/dt = 100 A/µs, VDD = 36 V, (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 48 ns Qrr Reverse recovery charge - 55 nC IRRM Reverse recovery current - 2.3 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
Test circuits STL200N45LF7
3 Test circuits
Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 PowerFLAT™ 5x6 type C package information
Figure 19: PowerFLAT™ 5x6 type C package outline 8231817_typeC_A0ER_Rev14 Bottom view Side view Top view
Table 8: PowerFLAT™ 5x6 type C package mechanical data Dim. mm Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 0.25 b 0.30 0.50 C 5.80 6.00 6.20 D 5.00 5.20 5.40 D2 4.15 4.45 D3 4.05 4.20 4.35 D4 4.80 5.00 5.20 D5 0.25 0.40 0.55 D6 0.15 0.30 0.45 e 1.27 E 5.95 6.15 6.35 E2 3.50 3.70 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 E6 0.20 0.325 0.45 E7 0.75 0.90 1.05 K 1.05 1.35 L 0.725 1.025 L1 0.05 0.15 0.25 θ 0° 12°
Figure 20: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)
4.2 PowerFLAT™ 5x6 packing information
Figure 21: PowerFLAT™ 5x6 tape (dimensions are in mm) 8231817_FOOTPRINT_rev14
5 Revision history
Table 9: Document revision history Date Revision Changes 17-Jun-2015 1 First release. 03-Mar-2016 2 Modified: title, RDS(on) max and ID value in cover page. Modified: Table 2: "Absolute maximum ratings", Table 4: "On/off- state", Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Sourcedrain diode". Added: Section 3.1: "Electrical characteristics (curves)". Modified: Section 5.1: "PowerFLAT™ 5x6 type C package information". Minor text changes 01-May-2016 3 Updated Table 4: "On/off-state", Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source-drain diode". Minor text changes. 10-Jun-2016 4 Document status promoted from preliminary to production data.