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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 4.1 PowerFLAT™ 5x6 type C package information
  • 4.2 PowerFLAT™ 5x6 packing information
  • 5 Revision history

Features

Order code VDS RDS(on) max ID STL130N6F7 60 V 0.0035 Ω 130 A  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness

Applications

 Switching applications

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STL130N6F7 130N6F7 PowerFLATTM 5x6 Tape and reel

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 130 A ID (1) Drain current (continuous) at TC = 100 °C 95 A IDM (1)(2) Drain current (pulsed) 520 A ID (3) Drain current (continuous) at Tpcb = 25 °C 26 A ID (3) Drain current (continuous) at Tpcb = 100 °C 19 A IDM (2)(3) Drain current (pulsed) 104 A PTOT (1) Total dissipation at TC = 25 °C 125 W PTOT (3) Total dissipation at Tpcb = 25 °C 4.8 W Tj Operating junction temperature -55 to 175 °C Tstg Storage temperature Notes: (1)This value is rated according to Rthj-c (2)Pulse width limited by safe operating area (3)This value is rated according to Rthj-pcb Table 3: Thermal data Symbol Parameter Value Unit Rthj-pcb (1) Thermal resistance junction-pcb max. 31.3 °C/W Rthj-case Thermal resistance junction-case max. 1.2 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec

2 Electrical characteristics

(TC = 25 °C unless otherwise specified) Table 4: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 60 V IDSS Zero gate voltage drain current VGS = 0 V VDS = 60 V 1 µA IGSS Gate-body leakage current VGS = 20 V, VDS = 0 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA 2 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 13 A 0.003 0.0035 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 2600 - pF Coss Output capacitance - 1200 - pF Crss Reverse transfer capacitance - 115 - pF Qg Total gate charge VDD = 30 V, ID = 26 A, VGS = 10 V - 42 - nC Qgs Gate-source charge - 13.6 - nC Qgd Gate-drain charge - 13 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 30 V, ID = 26 A, RG = 4.7 Ω, VGS = 10 V - 24 - ns tr Rise time - 44 - ns td(off) Turn-off delay time - 62 - ns tf Fall time - 24 - ns Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage ISD =26 A, VGS = 0 V - 1.2 V trr Reverse recovery time ID = 26 A, di/dt = 100 A/µs VDD = 48 V - 50 ns Qrr Reverse recovery charge - 56 nC IRRM Reverse recovery current - 2.2 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance ID 10.1 1 VDS(V)10 (A) Operation in this area isLimited by max R DS(on) 100µs 1ms 10ms Tj < 175°C Tc = 25°C Single pulse 100 10µs GIPD110520151416FSR ID

0 VDS(V)2

(A) VGS= 7, 8, 9, 10 V 120 160 6 8 GIPD280420151137FSR ID 100

0 VGS(V)2

(A) VDS = 6 V 150 6 8 GIPD280420151144FSR VGS 0 10 30 Qg(nC)20 (V) VDD = 30 V ID = 26 A12 GIPD280420151205FSR RDS(on) 2.96 5 10 20 ID(A)15 (mΩ) 2.88 3.04 3.12 VGS= 10V 3.20 GIPD280420151211FSR

0.7 5 10 20 ISD(A)15 (V) 0.5 0.6 0.8 0.9 Tj= 175°C Tj= -55°C Tj= 25°C GIPD280420151236FSR Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics C 100 0.1 1 VDS(V)10 (pF) Ciss Coss Crss f= 1MHz 1000 10000 GIPD280420151219FSR RDS(on) 1.0 Tj(°C) (norm) 0.2 0.6 1.4 1.8 VGS= 10V ID= 13A -75 -25 7525 125 175 2.2 GIPD280420151227FSR V(BR)DSS 1.00 (norm) 0.96 125 0.98 1.02

1.04 ID= 1mA

3 Test circuits

Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 PowerFLAT™ 5x6 type C package information

Figure 19: PowerFLAT™ 5x6 type C package outline

Table 8: PowerFLAT™ 5x6 type C mechanical data Dim. mm Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 0.25 b 0.30 0.50 D 5.20 E 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 0.65 L 0.715 1.015 K 1.05 1.35 E3 2.35 2.55 E4 0.40 0.60 E5 0.08 0.28 Figure 20: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm)

4.2 PowerFLAT™ 5x6 packing information

Figure 21: PowerFLAT™ 5x6 tape (dimensions are in mm) Figure 22: PowerFLAT™ 5x6 package orientation in carrier tape

Figure 23: PowerFLAT™ 5x6 reel

5 Revision history

Table 9: Document revision history Date Revision Changes 17-Feb-2015 1 First release. 11-May-2015 2 Updated and Section 2: "Electrical characteristics" Added Section 2.1: "Electrical characteristics (curves)" Updated Section 4: "Package mechanical data" Minor text changes. 30-Jun-2015 3 Document status promoted from preliminary to production data.