STL128D STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 12
Technical content
Features
■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode
Applications
■ Electronic ballast for fluorescent lighting ■ Flyback and forward single transistor low power converters
Description
These devices are high voltage fast-switching NPN power transistors. They are manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. They use a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The devices are designed for use in lighting applications and low cost switch-mode power supplies. Figure 1. Internal schematic diagram Table 1. Device summary
1 Electrical ratings
Table 2. Absolute maximum ratings Table 3. Thermal data
2 Electrical characteristics
Table 4. Electrical characteristics
- Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 1.5 %.
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain (V CE = 1.5 V) Figure 5. DC current gain (V CE = 5 V) Figure 6. Collector-emitter saturation Figure 7. Base-emitter saturation
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Table 5. TO-220 type A mechanical data
Figure 13. TO-220 type A drawing
Figure 14. TO-220FP drawing Table 6. TO-220FP mechanical data
4 Revision history
Table 7. Document revision history