STL120N10F8 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Package information
- 3.1 PowerFLAT 5x6 type B package information
- 3.2 PowerFLAT 5x6 packing information
- 3.3 PowerFLAT 5x6 marking information
Features
Order code VDS RDS(on) max. ID STL120N10F8 100 V 4.6 mΩ 125 A
- MSL1 grade
- 175 °C operating temperature
- 100% avalanche tested
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. Product status link STL120N10F8 Product summary Order code STL120N10F8 Marking(1) 120N10F8 Package PowerFLAT 5x6 Packing Tape and reel 1. For engineering samples marking, see Section 3.3 PowerFLAT 5x6 marking information. N‑channel enhancement mode standard level 100 V, 4.6 mΩ max., 125 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package STL120N10F8 Datasheet DS13899 - Rev 2 - January 2023 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings (at TC = 25 °C unless otherwise specified)
- The value is relevant to R thJC. Current limitations will come from the operative conditions, such as temperature and
thermalresistance of the PCB.
- Pulse width is limited by safe operating area.
- Specified by design, not tested in production.
Table 2. Thermal data
- Defined according to JEDEC standards (JESD51-5, -7).
2 Electrical characteristics
TJ = 25 °C unless otherwise specified. Table 3. On/off states
- Specified by design and evaluated by characterization, not tested in production.
Table 4. Dynamic
- Specified by design and evaluated by characterization, not tested in production.
Table 5. Switching times
- Specified by design and evaluated by characterization, not tested in production.
Electrical characteristics
Table 6. Source-drain diode
- The value is relevant to R thJC. Current limitations will come from the operating conditions, such as temperature and thermal
- Specified by design and evaluated by characterization, not tested in production.
2.1 Electrical characteristics (curves)
Figure 1. Total power dissipation Figure 2. Drain current vs case temperature Figure 3. Safe operating area Figure 4. Normalized transient thermal impedance Figure 5. Typical output characteristics Figure 6. Typical transfer characteristics
3 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
3.1 PowerFLAT 5x6 type B package information
Figure 17. PowerFLAT 5x6 type B package outline
Package information
Table 7. PowerFLAT 5x6 type B mechanical data
Figure 18. PowerFLAT 5x6 recommended footprint (dimensions are in mm)
3.2 PowerFLAT 5x6 packing information
Figure 19. PowerFLAT 5x6 tape (dimensions are in mm)
3.3 PowerFLAT 5x6 marking information
Figure 22. PowerFLAT 5x6 marking information production and/or in reliability qualification trials. Commercial Samples: fully qualified parts from ST standard production with no usage restrictions.
Revision history
Table 8. Document revision history 29-Nov-2022 1 Initial release. Updated title, Internal schematic and Device summary on cover page. Updated Section 1 Electrical ratings. Moved chapter four to Section 3.3 PowerFLAT 5x6 marking information.
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