STL10N3LLH5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses

Applications

■ Switching applications ■ Automotive

Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Figure 1. Internal schematic diagram

  1. The value is rated according Rthj-pcb

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. The value is rated according Rthj-pcb
  2. Pulse width limited by safe operating area.

Table 3. Thermal resistance

  1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec

Table 4. Avalanche data

  1. Pulse width limited by T Jmax.
  2. Starting T J = 25 °C, ID=IAV, VDD = 21 V

2 Electrical characteristics

Table 5. On/off states Table 6. Dynamic Table 7. Switching times (1)

Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized B VDSS vs temperature Figure 7. Static drain-source on resistance

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs Figure 12. Source-drain diode forward

0 VDS(V)10 20

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test Figure 17. Unclamped inductive wavefo rm Figure 18. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 9. PowerFLAT™ 3.3 x 3.3 mechanical data

Figure 19. PowerFLAT™ 3.3 x 3.3 drawing

Figure 20. PowerFLAT™ 3.3 x 3.3 recommended footprint

5 Revision history

Table 10. Document revision history 09-Aug-2011 1 First release.