STK0160 AUK | Alldatasheet

Document overview

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Technical content

Features

  • High Voltage: BV DSS=600V(Min.)
  • Low Crss : Crss=4.3pF(Typ.)
  • Low gate charge : Qg=4.5nC(Typ.)
  • Low RDS(on) :RDS(on)=9.4Ω(Max.)

Ordering Information

Type NO. Marking Package Code STK0160 STK0160 MPT O u t l i n e D i m e n s i o n s u n i t : mm PIN Connections 1. Gate 2. Drain 3. Source 7.30~7.50 1.70 Typ. 1.20 Max. 0.70 Max. 2.50 Typ. 2.50 Typ. 3.30~3.50 1.95~2.05 0.60 Max. 1 2 3 0.60 Max.

A b s o l u t e m a x i m u m r a t i n g s (Ta=25°C) Characteristic Symbol Rating Unit Drain-source voltage V DSS 600 V Gate-source voltage V GSS ±30 V Drain current (DC) I D 0.4 A Drain current (Pulsed) * I DP 1.6 A Drain Power dissipation P D 1.3 W A valanche current (Single) ② IAS 0.4 A Single pulsed avalanche energy ② EAS 1.7 mJ Avalanche current (Repetitive) ① IAR 0.4 A Repetitive avalanche energy ① EAR 50 µJ Junction temperature T J 150 Storage temperature range T stg -55~150 °C * Limited by maximum junction temperature Characteristic Symbol Typ. Max Unit Thermal resistance Junction-ambient R th(J-a) - 96.2 °C/W

E l e c t r i c a l C h a r a c t e r i s t i c s (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS ID=250µA, VGS=0 600 - - V Gate-threshold voltage V GS(th) ID=250µA, VDS= VGS 3.0 - 5.0 V Drain-source leakage current I DSS V DS=600V, VGS=0V - - 1 µA Gate-source leakage I GSS VDS=0V, VGS=±30V - - ±100 nA Drain-Source on-resistance ④ RDS(ON) V GS=10V, ID=0.2A - 8.8 9.4 Ω Forward transfer admittance ④ gfs V DS=10V, ID=0.2A - 0.95 - S Input capacitance Ciss - 150 225 Output capacitance Coss - 20 30 Reverse transfer capacitance Crss VGS=0V, VDS=25V, f=1MHz - 4.3 6.4 pF Turn-on delay time t d(on) - 22.5 - Rise time t r - 27 - Turn-off delay time t d(off) - 11.5 - Fall time t f VDD=300V, VGS=10V ID=0.4A, RG=25Ω - 27 - ns Total gate charge Q g - 4.5 6.7 Gate-source charge Q gs - 0.9 1.3 Gate-drain charge Q gd VDD=300V, VGS=10V ID=0.4A ③④ - 1.3 1.9 nC Source-Drain Diode Ratings and Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min Typ Max Unit Continuous source current I S - - 0.4 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 1.6 A F orward voltage ④ VSD V GS=0V, IS=0.2A - - 1.4 V Reverse recovery time t rr - 160 - ns Reverse recovery charge Q rr Is=0.4A, VGS=0V dis/dt=100A/us - 0.59 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=20mH, IAS=0.4A, VDD=50V , RG=25Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle ≤ 2% ④ Essentially independent of operating temperature

Fig. 5 Capacitance - V DS Fig. 1 I D - VDS Fig. 4 I S - VSD Fig. 3 R DS(on) - ID Fig. 6 V GS - QG Electrical Characteristic Curves Fig. 2 I D - VGS

ㅋ C C Fig. 8 RDS(on) - TJ Fig. 9 I D - Ta Fig. 7 V DSS - TJ Fig. 10 Safe Operating Area

Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform F i g . 1 3 EAS Test Circuit & Waveform

Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

The AUK Corp. products are intended for the use as components in general electronic equipment (Office and co mmunication equipment, m easuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equi pments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.