STK001SF AUK | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • Low VGS(th) : VGS(th)=0.6~1.2V
  • Small footprint due to small package
  • Low RDS (ON) : RDS (ON)= 33mΩ (Typ.)

Ordering Information

Type NO. Marking Package Code STK001SF K01 SOT-23F O u t l i n e D i m e n s i o n s u n i t : mm PIN Connections 1. Gate 2. Source 3. Drain 0.45 Max. 0.10 Max. 1.90 Typ. 2.80~3.00 2.30~2.50 0.80~1.00 1.50~1.70 0.20 Max. D G S Block Diagram

A b s o l u t e m a x i m u m r a t i n g s (Ta=25°C) Characteristic Symbol Rating Unit Drain-source voltage V DSS 20 V Gate-source voltage V GSS ±12 V Drain current (DC) ** I D 3.2 A Drain current (Pulsed) * I DP 12.8 A Total Power dissipation ** P D 0.35 W A valanche current (Single) ② IAS 3.2 A Single pulsed avalanche energy ② EAS 30 mJ Avalanche current (Repetitive) ① IAR 3.2 A Repetitive avalanche energy ① EAR 2.5 mJ Junction temperature T J 150 Storage temperature range T stg -55~150 °C * Limited by maximum junction temperature Device mounted on a glass-epoxy board Characteristic Symbol Typ. Max Unit Thermal resistance Junction-ambient R th(J-a) - 357 ℃/W

N - C H E l e c t r i c a l C h a r a c t e r i s t i c s (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS ID=250μA, VGS=0 20 - - V Gate threshold voltage V GS(th) ID=250μA, VDS=VGS 0.6 - 1.2 V Drain-source cut-off current I DSS V DS=20V, VGS=0V - - 1 μA Gate leakage current I GSS VDS=0V, VGS=±12V - - ±10 μA VGS=4.5V, ID=1.6A - 33 50 mΩ Drain-source on-resistance R DS(ON) VGS=2.5V, ID=1.6A - 46 70 mΩ Forward transfer conductance ④ gfs V DS=5V, ID=3.2A - 10.5 - S Input capacitance Ciss - 395 - Output capacitance Coss - 97 - Reverse transfer capacitance Crss VGS=0V, VDS=10V, f=1MHz - 44 - pF Turn-on delay time t d(on) - 3.2 - Rise time t r - 2.8 - Turn-off delay time t d(off) - 20 - Fall time t f VDD=10V, ID=3.2A RG=10Ω - 2.8 - ns Total gate charge Q g - 6.8 10 Gate-source charge Q gs - 0.8 1.2 Gate-drain charge Q gd VDD=10V, VGS=4.5V ID=3.2A ③④ - 0.9 1.1 nC Source-Drain Diode Ratings and Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min Typ Max Unit Source current I S - - 0.5 Sourcecurrent(Plused) ① ISM Integral reverse diode in the MOSFET - - 2.0 A F orward voltage ④ VSD V GS=0V, IS=0.5A - 0.7 1.2 V Reverse recovery time t rr - 24 - ns Reverse recovery charge Q rr Is=3.2A, VDD=10V dIS/dt=70A/us - 120 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=3.0mH, IAS=3.8A, VDD=10V , RG=25Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle ≤ 2% ④ Essentially independent of operating temperature STK001SF

  • m Fig. 1 I D - VDS Fig. 4 I S - VSD Fig. 3 R DS(on) - ID Fig. 6 V GS - QG Fig. 2 I D - VGS Fig. 5 Capacitance - V DS

4.5 1.6 Fig. 8 RDS(on) - TJ Fig. 9 I D - Ta Fig. 7 V DSS - TJ Fig. 10 Safe Operating Area

Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform F i g . 1 3 EAS Test Circuit & Waveform

Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform STK001SF

The AUK Corp. products are intended for the use as components in general electronic equipment (Office and co mmunication equipment, m easuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equi pments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.