STJ828EF AUK | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- -2.5V Gate drive.
- Low threshold voltage : Vth = -0.5~ -1.5V.
- High speed.
Ordering Information
Type NO. Marking Package Code STJ828EF J8 SOT-523F O u t l i n e D i m e n s i o n s u n i t : mm PIN Connections 1. Gate 2. Source 3. Drain 0.68 3 0~0.1 1.11±0.05 1.60±0.1 0.88±0.1 1.60±0.1 1.00±0.1 0.25~0.30 +0.1 -0.05
A b s o l u t e m a x i m u m r a t i n g s (Ta=25°C) Characteristic Symbol Ratings Unit Drain-Source voltage V DS -20 V Gate-Source voltage V GSS ±7 V DC Drain current I D -50 mA Drain Power dissipation P D 150 mW Channel temperature T ch 150 °C Storage temperature range T stg -55~150 °C E l e c t r i c a l C h a r a c t e r i s t i c s (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drian-Source breakdown voltage BV DSS ID=-100µA, VGS=0 -20 V Gate-Threshold voltage V th I D=-0.1mA, VDS=-3V -0.5 -1.5 V Drain cut-off current I DSS V DS=-20V, VGS=0 -1 µA Gate leakage current I GSS VGS=±7V, VDS=0 ±1 µA Drain-Source on-resistance R DS(ON) V GS=-2.5V, ID=-10mA 40 Ω Forward transfer admittance ｜Yfs｜ VDS=-3V, ID=-10mA 15 mS Input capacitance C iss V DS=-3V, VGS=0, f=1MHz 10.4 pF Output capacitance C oss V DS=-3V, VGS=0, f=1MHz 8.4 pF Reverse Transfer capacitance C rss V DS=-3V, VGS=0, f=1MHz 2.8 pF Turn-on time t ON VDD=-3V, ID=-10mA VGEN=0~-2.5V 0.15 ㎲ Turn-off time t OFF VDD=-3V, ID=-10mA VGEN=0~-2.5V 0.13 ㎲ *. Switching Time Test Circuit Ω
Electrical Characteristic Curves - ℃100℃ Fig1 ID - VDS Fig2 ID - VDS Fig3 IDR - VDS Fig4 ID - VGS Fig5 ｜Yfs｜ - I D Fig6 C - VDS
Fig7 VDS(on) - ID Fig8 t - ID Fig9 PD - Ta Ω