STI175N4F6AG STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 12
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 I²PAK package information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STI175N4F6AG 40 V 2.7 mΩ 120 A 190 W Designed for automotive applications and AEC-Q101 qualified Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications Power tools
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packing STI175N4F6AG 175N4F6 I²PAK Tube 1 2 3 TAB I²PAK
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at Tcase = 25 °C 120 A Drain current (continuous) at Tcase = 100 °C 120 IDM(2) Drain current (pulsed) 480 A PTOT Total dissipation at Tcase = 25 °C 190 W Tstg Storage temperature range -55 to 175 °C Tj Operating junction temperature range Notes: (1) Limited by package (2)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.79 °C/W Rthj-amb Thermal resistance junction-amb 62.5
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 40 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 40 V µA VGS = 0 V, VDS = 40 V, Tcase = 125 °C 100 IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 60 A 2.1 2.7 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 20 V, f = 1 MHz, VGS = 0 V - 7735 - pF Coss Output capacitance - 745 - Crss Reverse transfer capacitance - 560 - Qg Total gate charge VDD = 20 V, ID = 120 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") - 130 - nC Qgs Gate-source charge - 36 - Qgd Gate-drain charge - 42 - Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 20 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 24 - ns tr Rise time - 150 - td(off) Turn-off delay time - 106 - tf Fall time - 57 -
Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD(1) Source-drain current 120 A ISDM(2) Source-drain current (pulsed) 480 A VSD(2) Forward on voltage VGS = 0 V, ISD = 120 A - 1.3 V trr Reverse recovery time ISD = 120 A, di/dt = 100 A/µs, VDD = 32 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 36 ns Qrr Reverse recovery charge - 40 nC IRRM Reverse recovery current - 2.3 A Notes: (1) Limited by package. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
Test circuits STI175N4F6AG
3 Test circuits
Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 I²PAK package information
Figure 19: I²PAK package outline
Table 8: I²PAK package mechanical data Dim. mm Min. Typ. Max. A 4.40 – 4.60 A1 2.40 – 2.72 b 0.61 – 0.88 b1 1.14 – 1.70 c 0.49 – 0.70 c2 1.23 – 1.32 D 8.95 – 9.35 e 2.40 – 2.70 e1 4.95 – 5.15 E 10 – 10.40 L 13 – 14 L1 3.50 – 3.93 L2 1.27 – 1.40
5 Revision history
Table 9: Document revision history Date Revision Changes 26-Jan-2016 1 First release.