STW16N65M5 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 20

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested

Applications

■ Switching applications

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature
  2. Pulse width limited by safe operating area

Table 3. Thermal data

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

  1. C oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
  2. C oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as

Table 6. Switching times Table 7. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characterist ics (curves)

Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP Figure 4. Safe operating area for TO-220, Figure 5. Thermal impedance for TO-220, Figure 6. Safe operating area for IPAK Figure 7. Thermal impedance for IPAK

Figure 8. Output characteristics Figure 9. Transfer characteristics Figure 10. Normalized B VDSS vs temperature Figure 11. Static drain-source on resistance Figure 12. Output capacitance stored energy Figure 13. Capacitance variations

0 VDS(V)

3 Test circuits

Figure 19. Switching times test circuit for Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test Figure 23. Unclamped inductive wavefor m Figure 24. Switching time waveform

Package mechanical data STF/I/P/U/W16N65M5 10/20 Doc ID 15210 Rev 4

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Figure 25. TO-220FP drawing Table 8. TO-220FP mechanical data

Figure 26. I²PAK (TO-262) drawing Table 9. I²PAK (TO-262) mechanical data

Table 10. TO-220 type A mechanical data

Figure 27. TO-220 type A drawing

Table 11. IPAK (TO-251) mechanical data

Figure 28. IPAK (TO-251) drawing

Table 12. TO-247 mechanical data

Figure 29. TO-247 drawing

5 Revision history

Table 13. Document revision history 12-Feb-2009 1 First release. – Document status promoted from preliminary data to datasheet. – Added new package, mechanical data: I²PAK. – Removed DPAK, D²PAK packages and mechanical data. 10-Feb-2011 3 Modified R DS(on) value (see Table 4 and Figure 11).