Datasheet - STHU32N65DM6AG - Automotive-grade N-channel 650 V, 83 mΩ typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 HU3PAK package information
- 4.2 HU3PAK packing information
Features
Order code VDS RDS(on) max. ID STHU32N65DM6AG 650 V 97 mΩ 37 A
- AEC-Q101 qualified
- Fast-recovery body diode
- Lower R DS(on) x area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely dv/dt ruggedness
- Zener-protected
- Excellent switching performance thanks to the extra driving source pin
Applications
- Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STHU32N65DM6AG Product summary Order code STHU32N65DM6AG Marking 32N65DM6 Packing Tape and reel Automotive-grade N-channel 650 V, 83 mΩ typ., 37 A MDmesh DM6 Power MOSFET in an HU3PAK package STHU32N65DM6AG Datasheet DS13782 - Rev 3 - November 2021 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Referred to TO-247 package.
- Pulse width limited by safe operating area.
Table 2. Thermal data
- 1. When mounted on an 1-inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 4. On/off-state
- Specified By Design – Not tested in production.
Table 5. Dynamic
- C oss eq. is defined as the constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
Table 6. Switching times Figure 19. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical drain-source on-resistance Figure 6. Typical gate charge characteristics
3 Test circuits
Figure 13. Switching times test circuit for resistive load Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 HU3PAK package information
Figure 19. HU3PAK package outline
Package information
Table 8. HU3PAK package mechanical data
Figure 20. HU3PAK recommended footprint (dimensions in mm)
4.2 HU3PAK packing information
Figure 21. HU3PAK carrier tape outline Table 9. HU3PAK tape mechanical data
Figure 22. HU3PAK reel outline Table 10. HU3PAK reel mechanical data
Revision history
Table 11. Document revision history 28-Apr-2021 1 First release. Modified Table 8. HU3PAK package mechanical data.