STHI07N50 STMICROELECTRONICS | Alldatasheet

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30E D M@®@ 7929237 003010b 8 m3

7 SGS-THOMSON * ¢ S-TH°"S0N _HIO7N50

m MICROELECTRONICS STHIO7N50FI HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT) PRELIMINARY DATA STHIOZNEO 500 V 7A STHIO7NSOF1 500 V 7A * HIGH INPUT IMPEDANCE & , * LOW ON-VOLTAGE ‘et + HIGH CURRENT CAPABILITY ° N APPLICATIONS: \\\\ SS * AUTOMOTIVE IGNITION ws * DRIVERS FOR SOLENOIDS AND RELAYS N-channel High Injection POWER MOS transis- 70-220 'SOWATT220 tors (IGBT) which features a high impedance in- sulated gate input and a low on-resistance characteristic of bipolar transistors. This low resistance is achieved by conductivity modulation | INTERNAL SCHEMATIC D - of the drain, These devices are particularly suited DIAGRAM to automative ignition switching. They can also be used as drivers for solenoids and relays. ge __ Ss ABSOLUTE MAXIMUM RATINGS Vos _Drain-source voltage (Vas =0) 500 . v Ves Gale-source voltage £20 v Io(*) Drain current (contin.) at T,=25°C | 7 A lone Drain current (pulsed) 20 A STHIO7NSO STHIO7NGOFI Pi Total dissipation at T, <25°C 400 35 w Derating factor 08 0.28 WIC Tog Storage temperature 65 to 150 °c Ty Max. operating junction temperature 450 °c (°) Pulse width limited by safe operating area June 1988 6 . 627 0 ee

STHIO7N50 - STHIO7N50FI 30E D M@@ 7929237 0030107 T me S G S-THOMSON . THERMAL DATA® TO-220 | ISOWATT220 Rij - case Thermal resistance junction-case max 1.25 | 3.6 °cw T-39-~13 ELECTRICAL CHARACTERISTICS (T;= 25°C unless otherwise specified) tin [n [ : [o] OFF Ver) oss Drain-source ‘Ip= 250 pA Vas= 0 Vv breakdown voltage Ipgs__—-Zero gate voltage Vps= Max Rating 250 | nA drain current (Vqs=0) | Vpg= Max Rating x 0.8 T= 125°C 1000 | »A less Gate-body leakage Veg= +20 V +100] nA current (Vps = 0) ON (*) Vas ny Gate threshold Vos= Vas Ip= 250 pA v voltage: Voswa Draisouce votage |Vags 10V me 7A aaa DYNAMIC Qs Forward Vps= 20 V Ip= 7A transconductance Cys Input capacitance 850 | 950 | pF Coss Output capacitance | Vpg= 25 V f= 1 MHz 90 | 140 | pF Cres Reverse transfer Ves= 0 40 | 80 | pF capacitance SWITCHING RESISTIVE LOAD ta (on) Turn-on delay time | Vpp= 400 V Ip= 10A 100 | 150 | ns t Rise time Vg= 10V Rg= 1009 700 | 1000} ns ton Turn-off delay time 500 | 700 | ns t Fall time 800 | 1500] ns

216 THOMSON

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__30E D M™ 7929237 0030108 1 STHIO7N50 - STHIO7NS5OFI eed 6 S- . ELECTRICAL CHARACTERISTICS (Continued) S . S- THOMSON [reenter [on [on oe [a SWITCHING (continued) Ts . INDUCTIVE LOAD Vpp= 12V ta(om Turn-off delay time | Vpg ctamp= 350 Ip= 7A 1/44] as ty Fall time Ves= 10 V Rg= 1009 14) 45 | as - L = 10 mH T= 100°C USE TEST Voo= 14V Vps clamp = 400 V L =7mH (*) Pulsed: Pulse duration = 300 ys, duty cycle 1,5% ™ See note on ISOWATT220 or this datasheet Safe operating areas Thermal impedence Derating curve (standard package) (standard package) (standard package) ns Yr ee Pret feet HESS eft Sees Sees! Fai eae Ha CETTE) SETS COSC Be ONS Haan AR UEC) eC JETER) Eee Fe) EEERSSEE ECCT] wT | ee IS) wT een rae ME e « Se Ser aseaati i Fy) Seas eet eet i Th [Py rrr Ney CHMIERATEFND —CIMILTIRCIME TIC ECECECer ES “ w tt Vast " sas Output characteristics Transconductance Static drain-souce on voltage wT ea] “Ce HA 2 REaEeaananem epee ZAC] AT Roast] Hehe ee HA) SCC FAs 0888/27 a5 eee eee ee ce eeees anes [| LW | | SSS 4 AAG ae) 4am Err Viapzan . WL ‘HE A Lease Cee] (PACERS Copa ‘ Lit er CVerCCrE Vereen Hee EEE | LAE A ee y 316 a

sTHio7Nso- sTHio7Nsor! 22E > MM 799237 0030105 3 mm SG S-THOMSON ~~ Gate charge vs gate-source Normalized on voltage Reverse biased SOA voltage vs temperature se omy _ cn aPCCccCeeeeer HARA RSSSeies aimee Eeerecece) sie CRE Hele) Pye yyy ty a »HEEEE ee a HEE ANE}--H tee REECE EN FEE Ceer HEE ENE GES ul aoe PIT Try yyy ry ‘Ere EFSF er ow 2 O50 Oslncd a a TT) Pe eh i) T-39-13 Functional test circuit Functional test waveforms ‘ B lsat ee . ve wE= SNGLE PULSE [Jeza = sew 46 =]

7 J30E D mm 7929237 GO30110 TMM crtozNso- STHIOZNSOFI

SG S=THOMSON Switching times test circuit for resistive load Switching time waveforms for resistive load = gt [| “ ‘ 10%. t a vol © ok ee A j2200 |33 |v, wOFL pe [ yl 1 a ° aod oy ' roa __ fou! 1 \\on = a ii* seas tylon) tr s-6osstatett) Pulse width < 100 xs Duty cycle < 2% — 739-13. Clamped inductive load and RBSOA test circuit Clamped inductive waveforms Yoo Ve Vo—= fo) Vo Tom oa oy Ry Yop uw“ Yoo i? fl c Vamp Le \\ soem Gate charge test circuit . . ve inl foe : he a satin Se oun I ZA ° eo pm “ar fea i son PW adjusted to obtain required Vig =] 5/16 Le

STHIO7NGo-STHIo7NsoF) = 22E «DMM 7929237 OO30LL) 2 mm S G S-THOMSON ISOWATT220 PACKAGE THERMAL IMPEDANCE OF CHARACTERISTICS AND APPLICATION. ISOWATT220 PACKAGE ISOWATT220 is fully Isolated to 2000V do. Its ther- Fig. 1 illustrates the elements contributing to the mal impedance, given in the data sheet, Is optimi- thermal resistance of transistor heatsink assembly, sed to give efficient thermal conduction together —_ using ISOWATT220 package. with excellent electrical isolation. The total thermal resistance Ry, joy 1S the sum of The structure of the case ensures optimum distan- _ each of these elements. ces between the pins and heatsink. The — The transient thermal impedance, Zy, for different ISOWATT220 package eliminates the need for ex- pulse durations can be estimated as follows: ternal isolation so reducing fixing hardware. Accu- 4 . for a short duration power pulse less than 1ms; rate moulding techniques used in manufacture assure consistent heat spreader-to-heatsink capa- Zn< Pinuc cltance. f n . ISOWATT220 thermal performance is better than 2 for an intermediate power pulse of 5ms to S0ms: that of the standard part, mounted with a 0.1mm Zn= Pine mica washer. The thermally conductive plastic has fe , the a higher breakdown rating and is less fragile than 3- for long power pulses of the order of 500ms or mica or plastic sheets. Power derating for — 9ealer: ISOWATT220 packages is determined by: Zn= Pac + Rincis + Rinisemo - It Is often possibile to discern these areas on tran- T-To Pox sient thermal impedance curves. th f ae T-39- Fig. 1 13 Rins-c Renc-Hs Rtnis-amb WA ISOWATT DATA Safe operating areas Thermal impedance Derating curve . 1), perp eee pee pu fg Peal ts =a eae OE TTT TT TTT Aste eet eeerit Beal eseeet erent ct Aes masill sean Efe a Sere oe 2 SLUMS USE ai Sans Za Bi HEEEEEEEEEEH Si = stead fede rtm (IN Uy = ao} FEE BeSeeeth Sari aah HA | COC rrr EE SERS A ld | | a SCIENTIST [6 ACSREEE EET Pere eevee a SHS (EE SHS eth eam HI He a CLEC Ve eine 7d EAP HH PUPAE) fib “EEE wS CEH APT el LUE ! of LET IN ee A ew te 75 100 125 Teal) Fa a ‘eS Wat 6/6 oy THOMSON