STH9NA80

STW9NA80 STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 10

Technical content

N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.85Ω n ± 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 oC n LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED n REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STW9NA80 STH9NA80FI V DS Drain-source Voltage (VGS =0 ) 8 0 0 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 800 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC9 . 1 5 . 9 A ID Drain Current (continuous) at Tc =1 0 0oC6 3 . 9 A IDM (•) Drain Current (pulsed) 36.4 36.4 A P tot Total Dissipation at Tc =2 5 oC 190 80 W Derating Factor 1.52 0.64 W/ o C V ISO Insulation Withstand Voltage (DC)  4000 V Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STW9NA80 STH9NA80FI 800 V 800 V <1 . 0Ω <1 . 0Ω 9.1 A 5.9 A November 1998 TO-247 ISOWATT218

R thj-case Thermal Resistance Junction-case Max 0.65 1.56 oC/W R thj-amb R thc-sink T l Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.1 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 9.1 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 415 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 800 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS = Max Rating T c =1 0 0oC 500 µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS =V GS ID = 250 µ A 2.25 3 3.75 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID = 4.5 A 0.85 1 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V 9.1 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =4 . 5 A 7 . 5 1 0 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 2900 290 3800 380 105 pF pF pF STW9NA80-STH9NA80FI

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 400 V I D =4 . 5A R G =4 . 7 Ω VGS =1 0V (see test circuit, figure 3) ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 V I D =9A V GS =1 0V 1 1 5 150 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 640 V I D =9A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 9.1 36.4 A A V SD (∗) Forward On Voltage I SD =9 . 1A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 9 A di/dt = 100 A/µ s V DD = 100 V T j =1 5 0oC (see test circuit, figure 5) 765 113.4 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 STW9NA80-STH9NA80FI

Thermal Impedance for TO-247 Derating Curve for TO-247 Output Characteristics Thermal Impedance for ISOWATT218 Derating Curve for ISOWATT218 Transfer Characteristics STW9NA80-STH9NA80FI

Gate Charge vs Gate-sourceVoltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STW9NA80-STH9NA80FI

Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics STW9NA80-STH9NA80FI

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STW9NA80-STH9NA80FI

DIM. mm inch A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P TO-247 MECHANICAL DATA STW9NA80-STH9NA80FI

DIM. mm inch A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 A C D E H G M F 123 U L4 D1 N P025C ISOWATT218 MECHANICAL DATA STW9NA80-STH9NA80FI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics  1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com STW9NA80-STH9NA80FI