STH8NB90

STW8NB90 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET ■ TYPICAL R DS (on) = 1.1 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (1)ISD ≤8 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. TYPE V DSS R DS(on) ID STW8NB90 900 V < 1.45 Ω 8 A STH8NB90FI 900 V < 1.45 Ω 5 A Symbol Parameter Value Unit STW8NB90 STH8NB90FI VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 900 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 85 A ID Drain Current (continuos) at TC = 100°C 53 A IDM (● ) Drain Current (pulsed) 32 20 A PTOT Total Dissipation at TC = 25°C 200 80 W Derating Factor 1.6 0.64 W/°C dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C INTERNAL SCHEMATIC DIAGRAM TO-247 ISOWATT218

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-247 ISOWATT218 Rthj-case Thermal Resistance Junction-case Max 0.625 1.56 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 700 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 900 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250 µA 345V R DS(on) Static Drain-source On Resistance VGS = 10 V, ID = 4 A 1.1 1.45 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS > ID(on) x RDS(on)max, ID =4 A C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2120 pF C oss Output Capacitance 225 pF C rss Reverse Transfer Capacitance 23 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 450 V, ID = 3.5 A R G = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 25 ns tr Rise Time 12 ns Q g Total Gate Charge VDD = 400V, ID = 9A, VGS = 10V 46 72 nC Q gs Gate-Source Charge 12.5 nC Q gd Gate-Drain Charge 18 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 720V, ID = 7.4 A, R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 5) 22 ns tf Fall Time 15 ns tc Cross-over Time 31 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 8 A ISDM (2) Source-drain Current (pulsed) 32 A VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 7.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 700 ns Q rr Reverse Recovery Charge 6.3 µC IRRM Reverse Recovery Current 18 A Safe Operating Area for ISOWATT218Safe Operating Area for TO-247

Static Drain-source On ResistanceTransconductance Output Characteristics Thermal Impedence for TO-247 Thermal Impedence for ISOWATT218 Transfer Characteristics

Source-drain Diode Forward Characteristics Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Capacitance VariationsGate Charge vs Gate-source Voltage

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load

DIM. mm inch A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P TO-247 MECHANICAL DATA

DIM. mm inch A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 1.05 1.25 0.041 0.049 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638 L 9 0.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 P025C/A ISOWATT218 MECHANICAL DATA - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm

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