STW8NA80 STMICROELECTRONICS | Alldatasheet

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA n TYPICAL RDS(on) = 1.3Ω n ± 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 oC n LOW INTRINSIC CAPACITANCES n GATE GHARGE MINIMIZED n REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the most advanced high voltage technology. The op- timized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled rug- gedness and superior switching performance.

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STW8NA80 STH8NA80FI V DS Drain-source Voltage (VGS =0 ) 800 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 800 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC 7.2 4.5 A ID Drain Current (continuous) at Tc = 100 oC 4.5 2.8 A IDM (•) Drain Current (pulsed) 28.8 28.8 A P tot Total Dissipation at Tc =2 5 oC 175 70 W Derating Factor 1.4 0.56 W/ oC V ISO Insulation Withstand Voltage (DC)  4000 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STW8NA80 STH8NA80FI 800 V 800 V <1 . 5 0Ω <1 . 5 0Ω 7.2 A 4.5 A October 1998 TO-247 ISOWATT218 1 2 3

R thj-case Thermal Resistance Junction-case Max 0.71 1.78 oC/W R thj-amb R thc-sink T l Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.1 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 7.2 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 700 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS =0 800 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c = 100 oC 500 µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A 2.25 3 3.75 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =4 A 1.3 1.5 Ω ID(on) On State Drain CurrentV DS >I D(on) xR DS(on )max V GS =1 0V 7.2 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =4A 4.5 7.9 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS =0 1750 188 2300 245 pF pF pF STW8NA80 STH8NA80FI

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =4 0 0V I D =4A R G =4 . 7 Ω V GS =1 0V ns ns (di/dt)on Turn-on Current Slope V DD =6 4 0V I D =8A R G =4 7 Ω V GS =1 0V

170 A/ µ s

V DD = 400 V I D =8A V GS =1 0V 100 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =6 4 0V I D =8A R G =4 . 7 Ω V GS =1 0V ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 7.2 28.8 A A V SD (∗) Forward On Voltage I SD =7 . 2A V GS =0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =7 . 5A d i / d t=1 0 0A / µ s V DD = 100 V T j =1 5 0oC 850 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STW8NA80 STH8NA80FI

DIM. mm inch A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P TO-247 MECHANICAL DATA STW8NA80 STH8NA80FI

DIM. mm inch A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 A C D E H G M F 123 U L4 D1 N P025C ISOWATT218 MECHANICAL DATA STW8NA80 STH8NA80FI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com STW8NA80 STH8NA80FI