STW8NA60 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.92Ω n ± 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 oC n LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED n REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STW8NA60 STH8NA60FI V DS Drain-source Voltage (VGS = 0) 600 V V DGR Drain- gate Voltage (RGS =2 0k Ω ) 600 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =2 5 oC8 5 A ID Drain Current (continuous) at Tc =1 0 0oC5 . 1 3 . 2 A IDM (•) Drain Current (pulsed) 32 32 A P tot Total Dissipation at Tc =2 5 oC 150 60 W Derating Factor 1.2 0.48 W/ oC V ISO Insulation Withstand Voltage (DC)  4000 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STW8NA60 STH8NA60FI 600 V 600 V < 1 Ω < 1 Ω October 1998 TO-247 ISOWATT218 1 2 3

R thj-case Thermal Resistance Junction-case Max 0.83 2.08 oC/W R thj-amb R thc-sink T l Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.1 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =5 0V ) 480 mJ ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID =2 5 0µ AV GS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS =M a xR a t i n g T c = 100 oC 250 µ A µ A IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 30 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage VDS =V GS ID = 250 µ A2 . 2 5 3 3 . 7 5 V R DS(on) Static Drain-source On Resistance V GS =1 0 V ID =4A 0 . 9 2 1 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on )max V GS =1 0V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on )max ID =4A 4 . 5 6 . 6 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS = 0 1350 175 1690 230 pF pF pF STW8NA60-STH8NA60FI

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =3 0 0V I D =4A R G =4 . 7 Ω V GS =1 0V (see test circuit, figure 3) ns ns (di/dt)on Turn-on Current Slope V DD =4 8 0V I D =8A R G =4 7 Ω VGS =1 0V (see test circuit, figure 5)

200 A/ µ s

V DD = 480 V I D =8A V GS =1 0V 5 8 82 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =6 4 0V I D =8A R G =4 . 7 Ω VGS =1 0V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗)F o r w a r d O n V o l t a g e ISD =8A V GS =0 1 . 6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =8A d i / d t=1 0 0A /µ s V DD = 100 V T j =1 5 0oC (see test circuit, figure 5) 600 ns µ C A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 STW8NA60-STH8NA60FI

Thermal Impedance for TO-247 Derating Curve for TO-247 Output Characteristics Thermal Impedance for ISOWATT218 Derating Curve for ISOWATT218 Transfer Characteristics STW8NA60-STH8NA60FI

Gate Charge vs Gate-sourceVoltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STW8NA60-STH8NA60FI

Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics STW8NA60-STH8NA60FI

Fig. 1:Unclamped Inductive Load Test Circuit Fig. 3:Switching Times Test Circuits For Resistive Load Fig. 2:Unclamped Inductive Waveform Fig. 4:Gate Charge test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times STW8NA60-STH8NA60FI

DIM. mm inch A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P TO-247 MECHANICAL DATA STW8NA60-STH8NA60FI

DIM. mm inch A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 A C D E H G M F 123 U L4 D1 N P025C ISOWATT218 MECHANICAL DATA STW8NA60-STH8NA60FI

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