STH80N10LF7-2AG STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics curves
  • 3 Test circuits
  • 4 Package information
  • 4.1 H²PAK-2 shallow gullwing package information
  • 4.2 Packing information

Features

Order code VDS RDS(on) max. ID PTOT STH80N10LF7-2AG 100 V 10 mΩ 80 A 110 W

  • AEC-Q101 qualified
  • Among the lowest R DS(on) on the market
  • Excellent FoM (figure of merit)
  • Low C rss/Ciss ratio for EMI immunity
  • High avalanche ruggedness

Applications

  • Switching applications

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STH80N10LF7-2AG Product summary Order code STH80N10LF7-2AG Marking 80N10LF7 Package H²PAK-2 Packing Tape and reel Automotive-grade N-channel 100 V, 7 mΩ typ., 80 A, STripFET™ F7 Power MOSFET in an H2PAK-2 package STH80N10LF7-2AG Datasheet DS11708 - Rev 2 - January 2019 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width is limited by safe operating area.

Table 2. Thermal data

  1. When mounted on a 1-inch² FR-4 board, 2oz Cu.

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified). Table 3. Static

  1. Defined by design, not subject to production test.

Table 4. Dynamic Table 5. Switching times

Electrical characteristics

Table 6. Source-drain diode

  1. Pulse width limited by safe operating area.
  2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics curves

Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Gate charge vs gate-source voltage Figure 6. Static drain-source on-resistance

3 Test circuits

Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior Figure 14. Test circuit for inductive load switching and Figure 15. Unclamped inductive load test circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 H²PAK-2 shallow gullwing package information

Figure 18. H²PAK-2 shallow gullwing package outline

Package information

Table 7. H²PAK-2 shallow gullwing mechanical data Figure 19. H²PAK-2 recommended footprint (dimensions are in mm)

4.2 Packing information

Figure 20. Tape outline

Figure 21. Reel outline Table 8. Tape and reel mechanical data

Revision history

Table 9. Document revision history 14-Jan-2019 2 Updated description title and Section Features.