STH60N099DM9-2AG STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 14

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 H²PAK-2 package information
  • 4.2 Packing information

Features

Order code VDS RDS(on) max. ID STH60N099DM9-2AG 600 V 99 mΩ 27 A

  • AEC-Q101 qualified
  • Fast-recovery body diode
  • Worldwide best RDS(on) per area among silicon-based fast recovery devices
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely dv/dt ruggednes
  • Excellent switching performance thanks to the extra driving source pin

Applications

  • High efficiency switching applications

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. TAB H2PAK-2 DTG1S23NZ D(TAB) G(1) S(2, 3) Product status link STH60N099DM9-2AG Product summary Order code STH60N099DM9-2AG Marking 60A099DM9 Package H²PAK-2 Packing Tape and reel Automotive-grade N-channel 600 V, 76 mΩ typ., 27 A MDmesh DM9 Power MOSFET in an H²PAK-2 package STH60N099DM9-2AG Datasheet DS14223 - Rev 4 - August 2023 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings

Table 1. Absolute maximum ratings

  1. Pulse width limited by safe operating area.

Table 2. Thermal data

  1. When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 3. Avalanche characteristics

2 Electrical characteristics

TC = 25 °C unless otherwise specified. Table 4. On/off-states

  1. Specified by design, not tested in production.

Table 5. Dynamic characteristics

  1. Coss eq is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

Table 6. Switching times

Electrical characteristics

Table 7. Source-drain diode

  1. Pulse width is limited by safe operating area.
  2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Maximum transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics Figure 6. Typical drain-source on-resistance

3 Test circuits

Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 H²PAK-2 package information

Figure 19. H²PAK-2 package outline

Package information

Table 8. H²PAK-2 package mechanical data Figure 20. H²PAK-2 recommended footprint

4.2 Packing information

Figure 21. Tape outline Figure 22. Reel outline

Table 9. Tape and reel mechanical data

Revision history

Table 10. Document revision history 18-Jan-2023 1 First release. 01-Mar-2023 2 Updated Table 6. Switching times. Updated Figure 7. Typical capacitance characteristics. Updated Table 5. Dynamic characteristics and Table 7. Source-drain diode.

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