STW5NA100 STMICROELECTRONICS | Alldatasheet

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Technical content

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA ■ TYPICAL RDS(on) = 2.9 Ω ■ ± 30V GATE TO SOURCE VOLTAGE RATING ■ 100% AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 oC ■ GATE CHARGE MINIMISED ■ REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STW5NA100 STH5NA100FI V DS Drain-source Voltage (VGS = 0) 1000 V VDGR Drain- gate Voltage (RGS = 20 kΩ ) 1000 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC 4.6 2.9 A ID Drain Current (continuous) at Tc = 100 oC 2.9 1.8 A IDM (•) Drain Current (pulsed) 18.4 18.4 A P tot Total Dissipation at Tc = 25 oC 150 60 W Derating Factor 1.2 0.48 W/ oC V ISO Insulation Withstand Voltage (DC)  4000 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC (•) Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A October 1997 TO-247 ISOWATT218

R thj-case Thermal Resistance Junction-case Max 0.83 2.1 oC/W R thj-amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.1 300 oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 4.2 A E AS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR , VDD = 50 V) 160 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 1000 V IDSS Zero Gate Voltage Drain Current (VGS = 0) V DS = Max Rating V DS = Max Rating Tc = 100 oC 250 µ A µ A IGSS Gate-body Leakage Current (VDS = 0) V GS = ± 30 V ±100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS = VGS ID = 250 µ A 2.25 3 3.75 V R DS(on) Static Drain-source On Resistance V GS = 10V ID = 2.1 A 2.9 3.5 Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max V GS = 10 V 4.2 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗) Forward Transconductance V DS > ID(on) x RDS(on)max ID = 2.1 A 2 5.5 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz VGS = 0 1650 127 2150 165 pF pF pF STW5NA100-STH5NA100FI

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD = 500 V ID = 2.1 A R G = 4.7 Ω VGS = 10 V ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 800 V ID = 4.2 A VGS = 10 V 59 9.4 26.5 83 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD = 800 V ID = 4.2A R G = 4.7 Ω VGS = 10 V 142 132 199 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 4.6 18.4 A A V SD (∗) Forward On Voltage I SD = 4.2 A VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4.2 A di/dt = 100 A/µ s V DD = 30 V Tj = 150 oC 1000 ns µ C A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area STW5NA100-STH5NA100FI

DIM. mm inch A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P TO-247 MECHANICAL DATA STW5NA100-STH5NA100FI

DIM. mm inch A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U4 . 6 0 . 1 8 1 A C D E H G M F 123 U L4 D1 N P025C ISOWATT218 MECHANICAL DATA STW5NA100-STH5NA100FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . . . STW5NA100-STH5NA100FI