STH3N150-2 ISC | Alldatasheet
Document overview
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Technical content
iscN-ChannelMOSFETTransistor STH3N150-2 www.iscsemi.com 2023-9-71
FEATURES
- DrainCurrent-ID=2.5A@TC=25℃
- DrainSource Voltage-VDSS=1500V(Min)
- Static Drain-Source On-Resistance -RDS(on) =9Ω(Max)@VGS=10V
DESCRIPTION
- Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1500 V VGS Gate-SourceVoltage-Continuous ±30 V ID Drain Current-Continuous TC=25℃ 2.5 A TC=100℃ 1.6 A IDM DrainCurrent-SinglePluse 10 A PD TotalDissipation 140 W TJ Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.89 ℃/W
iscN-ChannelMOSFETTransistor STH3N150-2 www.iscsemi.com 2023-9-72 ELECTRICALCHARACTERISTICS（TC=25℃ unless otherwisespecified） SYMBO L PARAMETER CONDITIONS MIN Typ MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V;ID=1mA 1500 -- -- V VGS(th) GateThresholdVoltage VDS=VGS;ID=250uA 3.0 -- 5.0 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=1.3A -- -- 9.0 Ω IGSS Gate-BodyLeakageCurrent VGS= ±30V;VDS=0V -- -- ±100 nA IDSS ZeroGateVoltageDrainCurrent VDS=1500V;VGS=0V -- -- 10 uA VSD ForwardOn-Voltage IS=2.5A;VGS=0V -- -- 1.6 V Qg TotalGateCharge ID=3A VDD=750V VGS=10V -- 42 -- nCQgs GatetoSourceCharge -- 9 -- Qgd GatetoDrain(“Miller”)Charge -- 7 -- Ciss InputCapacitance VGS=0V, VDS=25V, f=1.0MHz -- 1670 -- pFCoss OutputCapacitance -- 100 -- Crss ReverseTransferCapacitance -- 10 -- EAS Singlepulseavalancheenergy ID=3A,Vg=10V,Rg=25Ω, -- -- 460 mJ ProductDisclaimer ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products.
iscN-ChannelMOSFETTransistor STH3N150-2 www.iscsemi.com 2023-9-73 ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages.