STH360N4F6-2 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 3 Package mechanical data
  • 4 Packaging mechanical data
  • 5 Revision history

Features

■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

Applications

■ Switching applications

Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. Figure 1. Internal schematic diagram

  1. Current limited by package

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current limited by package

Table 3. Thermal data

  1. When mounted on FR-4 board of 1 inch², 2 oz Cu

2 Electrical characteristics

Table 4. On/off states Table 5. Dynamic Table 6. Switching times

Table 7. Source drain diode

  1. Current limited by package
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

3 Package mechanical data

specifications, grade definitions and product status are available at: www.st.com. Table 8. H²PAK 2 mechanical data

Figure 2. H²PAK 2 drawing

Figure 3. H²PAK 2 recommended footprint

4 Packaging mechanical data

Table 9. H²PAK 2 tape and reel mechanical data

5 Revision history

Table 10. Document revision history 08-Aug-2012 1 First release.