STH315N10F7-2 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 19

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 4.1 H 2PAK-2, STH315N10F7-2
  • 4.2 H 2PAK-6, STH315N10F7-6
  • 5 Packaging mechanical data
  • 6 Revision history

Features

  • Designed for automotive applications and AEC-Q101 qualified
  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness

Applications

  • Switching applications

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. TAB H PAK-2 H PAK-6 TAB Order codes VDS RDS(on) max. I D STH315N10F7-2 100 V 2.3 m Ω 180 A STH315N10F7-6 Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current limited by package.
  2. Pulse width limited by safe operating area.
  3. Starting T J=25°C, ID=60 A, VDD=50 V

Table 3. Thermal data

  1. When mounted on 1 inch² FR-4 board, 2oz Cu

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified). Table 4. On/off states Table 5. Dynamic Table 6. Switching times

Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulse duration = 300µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

0 Qg(nC)

2.25 VGS=10V

Figure 8. Normalized V(BR)DSS vs temperature Figure 9. Capacitance variations Figure 10. Source-drain diode forward Figure 11. Normalized gate threshold voltage vs Figure 12. Normalized on-resistance vs

0 TJ(°C)

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 H 2PAK-2, STH315N10F7-2

Figure 19. H²PAK-2 drawing

Table 8. H²PAK-2 mechanical data

Figure 20. H²PAK-2 recommended footprint (dimensions are in mm)

4.2 H 2PAK-6, STH315N10F7-6

Figure 21. H²PAK-6 drawing

Table 9. H²PAK-6 mechanical data

Figure 22. H²PAK-6 recommended footprint (dimensions are in mm)

5 Packaging mechanical data

Figure 23. Tape

Figure 24. Reel Table 10. Tape and reel mechanical data

6 Revision history

Table 11. Document revision history 02-Aug-2013 1 Initial release. 12-Sep-2014 4 – Modified: title, features and description in cover page.