STH265N6F6-2AG STMICROELECTRONICS | Alldatasheet

Document overview

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Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Package mechanical data
  • 3.1 H2PAK-2 mechanical data
  • 3.2 H²PAK-6 package information
  • 4 Packaging information
  • 5 Revision history

Features

Order code VDS RDS(on) max ID STH265N6F6-2AG 60 V 2.1 mΩ 180 A STH265N6F6-6AG 60 V 2.1 mΩ 180 A  Designed for automotive applications  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss

Applications

 Switching applications

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order code Marking Package Packaging STH265N6F6-2AG 265N6F6 H2PAK-2 Tape and reel STH265N6F6-6AG 265N6F6 H2PAK-6 Tape and reel TAB TAB H2PAK-2 H2PAK-6 D(TAB) G(1) S(2, 3) SC06140_H2PAK-2-6 D(TAB) G(1) H2PAK-2 H2PAK-6

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25 °C 180 A ID(1) Drain current (continuous) at TC = 100 °C 180 A IDM (2) Drain current (pulsed) 720 A PTOT Total dissipation at TC = 25 °C 300 W EAS Single pulse avalanche energy (Starting TJ = 25 °C, ID = 80 A) 720 mJ Derating factor 2 W/°C Tstg Storage temperature - 55 to 175 °C Tj Operating junction temperature Notes: (1)Current limited by package. (2) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.5 °C/W Rthj-pcb(1) Thermal resistance junction-pcb max 35 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2 oz Cu.

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified) Table 4: On/off states Symbo l Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS = 0) ID = 250 µA 60 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 60 V 1 µA VDS = 60 V, TC=125 °C 100 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 60 A 1.6 2.1 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 11800 - pF Coss Output capacitance - 1235 - pF Crss Reverse transfer capacitance - 488 - pF Qg Total gate charge VDD = 30 V, ID = 120 A, VGS = 10 V - 183 - nC Qgs Gate-source charge - 53 - nC Qgd Gate-drain charge - 41 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 30 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V - 31 - ns tr Rise time - 165 - ns td(off) Turn-off-delay time - 144 - ns tf Fall time - 63 - ns

Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 180 A ISDM (1) Source-drain current (pulsed) 720 A VSD (2) Forward on voltage ISD = 180 A, VGS = 0 1.1 V trr Reverse recovery time ISD = 120 A, VDD = 48 V di/dt = 100 A/µs, Tj = 150 °C - 56 - ns Qrr Reverse recovery charge - 116 - nC IRRM Reverse recovery current - 3.8 - A Notes: (1) Pulse width limited by safe operating area. (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.2 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized V(BR)DSS vs. temperature Figure 7: Static drain-source on resistance tp(s) K 0.2 0.05 0.02 0.01 0.1 Zth=k Rthj-c ᵟ=tp/ t tp t Single pulse ᵟ=0.5 280tok -75 TJ(°C) (norm) -25 7525 125 0.6 0.7 0.8 0.9 1.0 1.1 175 ID=1mA AM09071v1V(BR)DSS RDS(on) 1.4 1.2

40 ID(A)

(mΩ) 20 60 1.6 1.8 VGS=10V 100800

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

3.1 H2PAK-2 mechanical data

Figure 13: H²PAK-2 outline 8159712_D

Table 8: H²PAK-2 mechanical data Dim. mm Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8°

Figure 14: H²PAK-2 recommended footprint 8159712_D

3.2 H²PAK-6 package information

Figure 15: H²PAK-6 outline 8159693_Rev_F

Table 9: H²PAK-6 mechanical data Dim. mm Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.5 1.75 M 1.90 2.50 R 0.20 0.60 V 0° 8°

Figure 16: H²PAK-6 recommended footprint Dimensions are in mm. footprint_Rev_F

STH265N6F6-2AG, STH265N6F6-6AG Packaging information

4 Packaging information

Figure 17: Tape outline

Packaging information STH265N6F6-2AG, STH265N6F6-6AG Figure 18: Reel outline Table 10: Tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 A D B Full radius Tape slot In core for Tape start G measured At hub C N REEL DIMENSIONS 40 mm min. Access hole At slot location T

5 Revision history

Table 11: Document revision history Date Revision Changes 13-Oct-2014 1 First release. 18-Dec-2014 2 Document status promoted from preliminary to production data.