STH250N55F3-6 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Packaging mechanical data
  • 6 Revision history

Features

■ Ultra low on-resistance ■ 100% avalanche tested Application Switching applications

Description

This N-channel STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. Figure 1. Internal schematic diagram Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current limited by package.
  2. Pulse width limited by safe operating area.
  3. Starting Tj = 25 °C, I D = 60 A, VDD = 40 V (see Figure 16 and Figure 17)

Table 3. Thermal data

  1. When mounted on FR-4 board, on 1inch², 2oz Cu.

2 Electrical characteristics

Table 4. On/off states Table 5. Dynamic

Table 6. Source drain diode

  1. Pulse width limited by safe operating area
  2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized B VDSS vs temperature Figure 7. Static drain-source on resistance

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test Figure 17. Unclamped inductive wavefor m Figure 18. Switching time waveform

4 Package mechanical data

Table 7. H²PAK-6 mechanical data

5 Packaging mechanical data

Figure 21. H²PAK-6 tape and reel

6 Revision history

Table 8. Revision history