STH200N55F3-2 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 11

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

■ Ultra low on-resistance ■ 100% avalanche tested Application ■ Switching applications

Description

This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. Figure 1. Internal schematic diagram

  1. Current limited by package

Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current limited by package
  2. Pulse width limited by safe operating area
  3. This value is rated according to Rthj-c

Table 3. Thermal data

  1. When mounted on 1 inch 2 FR-4 2 oz Cu

2 Electrical characteristics

Table 4. On /off states Table 5. Dynamic

3 Test circuits

Figure 2. Switching times test circuit for Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. Unclamped inductive load test Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Table 8. H²PAK 2 leads mechanical data

5 Revision history

Table 9. Document revision history 30-Jul-2009 1 First release.