Datasheet - STH180N10F3-2 - N‑channel 100 V, 3.9 mΩ typ., 180 A STripFET F3 Power MOSFET in H²PAK‑2 package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 13
Technical content
Features
Order code VDS RDS(on) max. ID STH180N10F3-2 100 V 4.5 mΩ 180 A
- Ultra low on-resistence
- 100% avalanche tested
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Product status link STH180N10F3-2 Product summary Order code STH180N10F3-2 Marking 180N10F3 Package H2PAK-2 Packing Tape and reel N‑channel 100 V, 3.9 mΩ typ., 180 A STripFET F3 Power MOSFET in H²PAK‑2 package STH180N10F3-2 Datasheet DS7317 - Rev 3 - March 2022 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Current limited by package
- Pulse width limited by safe operating area
Table 2. Thermal data
- When mounted on FR-4 board of 1 inch², 2 oz Cu
2 Electrical characteristics
TC= 25 °C unless otherwise specified. Table 3. On/off-state Table 4. Dynamic Table 5. Switching times
Electrical characteristics
Table 6. Source-drain diode
- Pulse width limited by safe operating area
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Normalized V(BR)DSS vs temperature Figure 6. Static drain-source on-resistance
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs Figure 10. Normalized on-resistance vs temperature
2.1 I D =60A
Figure 11. Source-drain diode forward characteristics
1.0 T J =-55°C
3 Test circuits
Figure 12. Test circuit for resistive load switching times Figure 13. Test circuit for gate charge behavior Figure 14. Test circuit for inductive load switching and Figure 15. Unclamped inductive load test circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 H²PAK-2 package information
Figure 18. H²PAK-2 package outline
Package information
Table 7. H²PAK-2 package mechanical data Figure 19. H²PAK-2 recommended footprint
4.2 Packing information
Figure 20. Tape outline Figure 21. Reel outline
Table 8. Tape and reel mechanical data
Revision history
Table 9. Document revision history
- Modified fig 2.
- Updated package mechanical data.
- Updated the title, features and description. 02-Mar-2022 3 Updated Figure 1. Safe operating area. Minor text changes. STH180N10F3-2 DS7317 - Rev 3 page 12/13