STH15N50

STH15N50_V01 STMICROELECTRONICS | Alldatasheet

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M@@ 7929237 0045924 T33 MESGTH | . | G7 77 SGS-THOMSON STH15N50/Fl MICROELECTRONICS STW15N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR NT INI Ot OT STHI5N50 S00V. | <042 |) 15A | SEN | ‘STHI5NS5OFI S00V | <049 | 939A feliae 10-247 i STWI5N50_— | 500V_ | <049 15A A «TYPICAL Rosion) = 0.34 Q = AVALANCHE RUGGED TECHNOLOGY 3 = 100% AVALANCHE TESTED 7 «REPETITIVE AVALANCHE DATA AT 100°C. a REDUCED GATE CHARGE = APPLICATION ORIENTED | } CHARACTERIZATION S 3 | 2 2 APPLICATIONS | 1 1 } » HIGH CURRENT, HIGH SPEED SWITCHING To216 'SOWATT216 J = SWITCH MODE POWER SUPPLIES (SMPS) = CHOPPER REGULATORS, CONVERTERS, — MOTOR CONTROL, LIGHTING FOR INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL AND CONSUMER ° ENVIRONMENT , Q so) ABSOLUTE MAXIMUM RATINGS Parameter Unit Vos _ |Drain-source Voltage (Vos = 0) | 00 Vocr__|Drain- gate Voltage (Res = 20 kQ) ____500 Lv Vos __|Gate-source Voltage __ +20 jv lb Drain Current (continuous) at Te = 25 °C . 15 9.3 A lo _ [Drain Current (continuous) at Te = 100 °C [ 94 _ 58 la Ipw(*) [Drain Current (pulsed) 60 60 LA Prot _ [Total Dissipation at To = 25 °C - 180 70 w Derating Factor __ 1.44 0.56 wre Viso__|Insulation Withstand Voltage (DC) j= 4000 Vv Ts [Storage Temperature “6510150 °c | 1) __[Max. Operating Junction Temperature 150 °c_| (@) Pulse width Tmited by safe operating area ~ May 1993 v7 437

TH1 : 41 STHISNSOIFI-STWISNSO gy 2qaq2a7 0045929 977 MBSGTH THERMAL DATA Rimj.ame |Thermal Resistance Junction-ambient Max 30 °C/W Rihe-sink [Thermal Resistance Case-sink Typ 0.1 °C Ti ___|Maximum Lead Temperature For Soldering Purpose 300 °c AVALANCHE CHARACTERISTICS Symbol [Parameter | Max Value | unit Avalanche Current, Repetitive or Not-Repetitive A (pulse width limited by Tj max, 8 < 1%) _ Single Pulse Avalanche Energy mJ (starting T; = 25 °C, lo = lan, Voo = 25 V) Repetitive Avalanche Eneray 30 md (pulse width limited by T) max, 6 < 1%) __ laa [Avalanche Current, Repetitive or Not-Repetitive 94 A (Te = 100 °C, pulse width limited by Tj max, 6 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol | Parameter Test Conditions| [ Min. | Typ. | Max. | Unit | Vierjoss |Drain-source Ip=250HA Vos=0 Vv Breakdown Voltage Zero Gate Voltage | Vos = Max Rating 250 | pA Drain Current (Ves = 0) |Vos = Max Rating x 0.8 Te= 125°C (1000 | WA loss [Gate-body Leakage |Vas= + 20 V +100 | nA __Gurrent (Vos = 0) 7 ON (*) symbol Parameter "Test Conditions ~ | Min. [| typ. [ Max. | Unit Vosim [Gate Threshold Voltage |Vos= Vas lp=250uA 2|/3 ]4tfv Rosion) {Static Drain-source On |Vas=10V lo=7.5A 034 | 04 | 9 _ Resistance Vos=10V Ip=7.5A Te = 100°C 0.8 Q Io(on) [On State Drain Current [Vos > !o(an) x Rosion)max Vas = 10 V DYNAMIC gi (*) [Forward Vos > loon) X Rostenimax In=7.5A] 8.5 | 11.2 s Transconductance _ | Gee [input Capacitance |Vos= 25V f=1MHz Vos=0 2350 | 3000 | pF Coss |Output Capacitance 340 440 | pF Crs [Reverse Transfer 75 | 100 | pF Capacitance __ Lo : an i , e seicRORLECTROMES 438

— M@@ 7929237 0045930 691 MMSGTH STHINSO/FI- STWISNSO ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON | symbot Parameter Test Conditions | Min. | Typ. | Max. | Unit | tajon) | Turn-on Time Voo=210V Ip=7A 60 80 ns tb Rise Time Ro = 4.72 Ves = 10 V 55 70 ns a _ (see test circuit, figure 3) en a (di/dt)on |Turn-on Current Slope |Vop=400V In=15A 270 Alus Re =4.72 Vas = 10 V (see test circuit, figure 5) I Q, Total Gate Charge Voo=400V In=15A Vas=10V 90 110 | nc Q5: | Gate-Source Charge 12 Lone Qoa Gate-Drain Charge 48 { nc SWITCHING OFF [Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit truvo [Off-voltage Rise Time |Vopn=400V Ip = 15A 35 45 ns t Fall Time Reo = 4.72 Ves = 10 V 45 60 ns te Cross-over Time (see test circuit, figure 5) 65 85 ns SOURCE DRAIN DIODE [ symboi | Parameter | __—_—Test Conditions| Min. | Typ. | Max. | Unit | Iso Source-drain Current | 15 A | 'som(e) | Source-drain Current | 60 A | (pulsed) _ | . [ Vso (*) | Forward On Voltage Iso 215 A Ves =O _ T 21 ma i ter Reverse Recovery Iso = 15 A di/dt = 100 A/us | 630 tons | iTime Von =100V T= 150°C | | Qe |Reverse Recovery (see test circuit, figure 5) t 10.7 uc | ICharge | raw \\Reverse Recovery 34 A Current (©) Pulsed: Base duraton = 300 8, duty ye TS% (+) Pulse with imtedby sat operating area Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218 ets TT _cczsg |_ (Ea QF rr ee ia KOSH ious Coe a FA } UNI ATT oii [ Sn | | FACS lil HSE NTE wo LIS Yo Cl el SCARS ms a “BAHAR Sime FEE 7A A | om 7 NT com SCOTS Non, Gull CNS Hil vs les. cme" I oe UIT He (1 iiss ess ew | Hes [Sea fesse: a Eb FN poor Ht 4 Somes omtesenierin ences }100ms_ feat Si LH “ET iio.c. operanion\\ A) Ai AHA TAR 2c ro LH UIT UTI CLE TT re oP ToR* Tho VS wy re * “ot ior **T08* Hey) TS 59 re

STH15N50/Fl - STW15N50 @@ 7929237? 0045931 528 MMSGTH Thermal Impedeance For TO-218 and TO-247 Thermal Impedance For ISOWATT218 Cit i ee anil foal erin ea: Saag eee Za t) S Lot po eros all Po o aa LN vo LIE Se eet Sent ane asia Sesh ati Beam: oo epee oor Ce LTE If 20 = & Rn PB 0.31 [i] 20 = «Rave Fetter aii rb] | ee SE A Ce a vo A TT TTT oC LL Derating Curve For TO-218 and TO-247 Derating Curve For ISOWATT218 existe censen Prat (W) FS SUESSSREe RRS REEeEs, Prot W) TT TTT | a ree ry Coo oe FARE EEE EERE EEE ECE wo NRE so HENCE EEE 4 Coe EERE NSEE REE Po Ee

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— MM 7929237 0045932 464 MMSGTH __ STHISNSO/FI-STW15N50 Transconductance Static Drain-source On Resistance Wane Ronse] DT of TT TTT TTT

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STHISNSOFI-STWi5N5O MM 7929237 0045933 370 mmScTH — Turn-on Current Slope Turn-off Drain-source Voltage Slope aie ecu auyel cc (hus) A ws T TTT TTT TT] val Nf | ve =00v hi | TT v9p =2oov HN 4 [tesa 200 12 \\ wot | | | NTT I aN PENSE] APR “~ N 120] — PoP PPP es Co PE ott! tT itt tt) PPT tet yet Ty 0 20 40 60 BO Rea) 0 20 40 60 BO Re(a) Cross-over Time Switching Safe Operating Area or) a @CCDOC PEE Se eR 400 coo [ty ty yy soft {tT rrr tty anne SSR

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M@ 7929237 0045934 237 MESGTH STHISNSO/FI - STW15N50 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Verjoss ‘ Vo —= % | a luF Yoo low ° i” lo” \\ — Yoo “x nN Yeo ‘ K owt. ~~ ra \\ | “ Veen eee Pw ~~ ‘scosseo Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit Resistive Load Yeo | Vv AKO Ka wot ae Veo } TLs Re j ° e} o+ | out. 7a fe T vs Fig. 5: Test Circuit For inductive Load Switching And Diode Reverse Recovery Time a Lee we LaF | ve + Re is SGS-THOMSON 7” AS SBIR