STH145N8F7-2AG STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 16
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 H²PAK-2 package information
- 5 Packing information
- 6 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STH145N8F7-2AG 80 V 4 mΩ 90 A 200 W Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packaging STH145N8F7-2AG 145N8F7 H²PAK-2 Tape and reel
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 ° C 90 (1) A ID Drain current (continuous) at TC = 100 ° C 90 A IDM(2) Drain current (pulsed) 360 A PTOT Total dissipation at TC = 25 ° C 200 W EAS(3) Single pulse avalanche energy 515 mJ Tj Operating junction temperature - 55 to 175 ° C Tstg Storage temperature Notes: (1)Limited by package (2)Pulse width is limited by safe operating area (3)Starting Tj =25 ° C, Id = 18.5 A, Vdd = 50 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-pcb (1) Thermal resistance junction-pcb 35 ° C/W Rthj-case Thermal resistance junction-case 0.75 ° C/W Notes: (1)When mounted on FR-4 board of 1inch² , 2oz Cu
2 Electrical characteristics
(TCASE = 25 ° C unless otherwise specified) Table 4: On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 250 µA 80 V IDSS Zero gate voltage Drain current VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TJ=125 ° C 10 µA IGSS Gate-source leakage current VDS = 0, VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V RDS(on) Static drain-source on- resistance VGS=10 V, ID = 45 A 3.3 4 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0, VDS = 40 V, f = 1 MHz - 6340 - pF Coss Output capacitance - 1195 - pF Crss Reverse transfer capacitance - 105 - pF Qg Total gate charge VDD = 40 V, ID = 64 A, VGS = 10 V - 96 - nC Qgs Gate-source charge - 30 - nC Qgd Gate-drain charge - 26 - nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 40 V, ID = 45 A RG=4.7 Ω, VGS = 10 V - 26 - ns tr Rise time - 51 - ns td(off) Turn-off-delay time - 82 - ns tf Fall time - 44 - ns
Table 7: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 90 A ISDM(1) Source-drain current (pulsed) 360 A VSD (2) Forward on voltage VGS = 0, ISD = 90 A - 1.2 V trr Reverse recovery time ISD = 64 A, di/dt = 100 A/µ s, VDD = 60 V Tj = 150 ° C - 58 ns Qrr Reverse recovery charge - 92 nC IRRM Reverse recovery current - 3.2 A Notes: (1)Pulse width is limited by safe operating area (2)Pulse test: pulse duration = 300 µ s, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized V(BR)DSS vs. temperature Figure 7: Static drain-source on resistance ID 100 0.1 0.1 1 VDS(V)10 (A) Operation in this area is Limited by max RDS(on) 100µs 1ms 10ms Tj=175°C Tc=25°C Sinlge pulse GIPD130920130848MT K tp(s) Single pulse 10-1 δ= 0.5 0.2 0.1 0.05 0.02 0.01 10-2 10-210-310-410-510-610-7 10-1 ID 0 2 VDS(V)4 (A) 6 8 100 150 200 VGS= 10V 250 300 GIPD130920130919MT ID 0 2 VGS(V)4 (A) VDS= 2V 6 8 100 150 200 1 3 5 7 300 250 V(BR)DSS 0.98 0.96 0.94 -75 TJ(°C)25 0 75 125-25 175 ID= 250µA 1.02 1.04 RDS(on) 3.290 20 ID(A) (mΩ) VGS= 10V 30 40 50 60 70 80 90 3.295 3.300 3.305 3.310 3.315 GIPD120920131215MT
0.6
20 ID(A)50
TJ= -55°C 30 70 80 90 0.7 0.8 0.9 1.1 TJ= 25°C TJ= 175°C Figure 8: Gate charge vs. gate-source voltage Figure 9: Capacitance variations Figure 10: Normalized gate threshold voltage vs. temperature Figure 11: Normalized on resistance vs. temperature Figure 12: Source-drain diode forward characteristics VGS 0 40 Qg(nC)80 (V) 20 60 100 C 3000 2000 1000 0 20 VDS(V)40 (pF) Ciss 4000 10 30 50 Coss Crss 60 70 5000 6000 7000 8000 VGS(th) 0.8 0.6 0.4 -75 TJ(°C)25 1.2 0 75 125-25 175 ID= 250µA RDS(on) 0.8 0.6 0.4 -75 TJ(°C)25 1.8 0 75 125-25 175 VGS= 10V 1.2 1.4 1.6
Test circuits STH145N8F7-2AG
3 Test circuits
Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 H²PAK-2 package information
Figure 19: H²PAK-2 package outline 8159712_D
Table 8: H²PAK-2 mechanical data Dim. mm Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8°
Figure 20: H²PAK-2 recommended footprint 8159712_D
STH145N8F7-2AG Packing information
5 Packing information
Figure 21: Tape outline
Packing information STH145N8F7-2AG Figure 22: Reel outline Table 9: Tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 A D B Full radius Tape slot In core for Tape start G measured At hub C N REEL DIMENSIONS 40 mm min. Access hole At slot location T
6 Revision history
Table 10: Document revision history Date Revision Changes 05-Jun-2015 1 First release.