STH140N6F7-2 STMICROELECTRONICS | Alldatasheet

Document overview

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  • PDF pages: 19

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 H²PAK-2 package information
  • 4.2 H²PAK-6 package information
  • 4.3 H²PAK packing information
  • 5 Revision history

Features

Order code VDS RDS(on) max. ID PTOT STH140N6F7-2 60 V 0.0032 Ω 80 A 158 W STH140N6F7-6  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness

Applications

 Switching applications

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH140N6F7-2 140N6F7 H²PAK-2 Tape and Reel STH140N6F7-6 140N6F7 H²PAK-6 Tape and Reel

1 Electrical ratings

Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at Tcase = 25 °C 80 A Drain current (continuous) at Tcase = 100 °C 80 IDM(2) Drain current (pulsed) 320 A PTOT Total dissipation at Tcase = 25 °C 158 W Tstg Storage temperature -55 to 175 Tj Maximum junction temperature 175 Notes: (1) Current is limited by package. (2) Pulse width is limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-pcb(1) Thermal resistance junction-pcb 35 °C/W Rthj-case Thermal resistance junction-case 0.95 Notes: (1) When mounted on a 1-inch² FR-4, 2 oz Cu board.

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 60 V IDSS Zero gate voltage drain current VGS = 0 V, VDS = 60 V µA VGS = 0 V, VDS = 60 V, Tcase = 125 °C 100 IGSS Gate-body leakage current VDS = 0 V, VGS = +20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 40 A 0.0028 0.0032 Ω Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 3100 - pF Coss Output capacitance - 1520 - Crss Reverse transfer capacitance - 193 - Qg Total gate charge VDD = 30 V, ID = 80 A, VGS = 10 V (see Figure 14: "Gate charge test circuit") - 55 - nC Qgs Gate-source charge - 19 - Qgd Gate-drain charge - 18 - Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 30 V, ID = 40 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Switching times test circuit for resistive load" and Figure 18: "Switching time waveform") - 24 - ns tr Rise time - 68 - td(off) Turn-off delay time - 39 - tf Fall time - 20 -

Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage VGS = 0 V, ISD = 80 A - 1.2 V trr Reverse recovery time ISD = 80 A, di/dt = 100 A/µs, VDD = 48 V (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 42.4 ns Qrr Reverse recovery charge - 38.2 nC IRRM Reverse recovery current - 1.8 A Notes: (1) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

2.1 Electrical characteristics (curves)

Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance

Test circuits STH140N6F7-2, STH140N6F7-6

3 Test circuits

Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 H²PAK-2 package information

Figure 19: H²PAK-2 package outline 8159712_D

Table 8: H²PAK-2 package mechanical data Dim. mm Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8°

Figure 20: H²PAK-2 recommended footprint 8159712_D

4.2 H²PAK-6 package information

Figure 21: H²PAK-6 package outline 8159693_Rev_F

Table 9: H²PAK-6 package mechanical data Dim. mm Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.5 1.75 M 1.90 2.50 R 0.20 0.60 V 0° 8°

Figure 22: H²PAK-6 recommended footprint Dimensions are in mm. footprint_Rev_F

4.3 H²PAK packing information

Figure 23: Tape outline Figure 24: Reel outline A D B Full radius Tape slot In core for Tape start G measured At hub C N REEL DIMENSIONS 40 mm min. Access hole At slot location T

Table 10: Tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3

5 Revision history

Table 11: Document revision history Date Revision Changes 02-Aug-2013 1 Initial release. 01-Apr-2015 2 Throughout document:  minor text changes  added H²PAK-6 package information.  removed TO-220FP and TO-220 package information. In Section 1 Electrical ratings:  updated Table 2. Absolute maximum ratings  updated Table 3. Thermal data In Section 2 Electrical characteristics:  updated and renamed Table 4. Static (was "On /off states")  updated Table 5. Dynamic  updated Table 6. Switching times  updated Table 7. Source drain diode  added Section 2.1 Electrical characteristics (curves) 16-Jul-2015 3 Document status promoted from preliminary to production data.