STH13009 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed
Applications
■ Switching mode power supplies
Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds. Figure 1. Internal schematic diagram Table 1. Device summary
1 Absolute maximum ratings
Table 3. Thermal data Table 2. Absolute maximum ratings
2 Electrical characteristics
Table 4. Electrical characteristics
- Pulsed duration = 300 ms, duty cycle ≥1.5%.
2.1 Electrical characteristic (curves)
Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain Figure 5. DC current gain Figure 6. Collector-emitter saturation Figure 7. Base-emitter saturation
2.2 Test circuit
Figure 10. Inductive load switching test circuit Figure 8. Inductive load switching time Figure 9. Reverse biased safe
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
DIM. mm. MIN. TYP MAX. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L1 3 1 4 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 TO-220 Mechanical data
4 Revision history
Table 5. Document revision history