STH110N10F7-2 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 19
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 H2PAK-2 package information
- 4.2 H2PAK-6 package information
- 4.3 Packing information
- 5 Revision history
Features
Order code VDS RDS(on) max. ID PTOT STH110N10F7-2 100 V 6.5 mΩ 110 A 150 W STH110N10F7-6 Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STH110N10F7-2 110N10F7 H2PAK-2 Tape and reel STH110N10F7-6 H2PAK-6 H2PAK-2 H2PAK-6 TAB TAB 3 1 S(2,3,4,5,6,7)
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 110 A ID (1) Drain current (continuous) at TC = 100 °C 76 A ID (2) Drain current (continuous) at Tpcb = 25 °C 18 A ID (2) Drain current (continuous) at Tpcb = 100 °C 13 A IDM (3) Drain current (pulsed) 430 A PTOT (1) Total dissipation at TC = 25 °C 150 W EAS (4) Single pulse avalanche energy 490 mJ TJ Operating junction temperature -55 to 175 Tstg Storage temperature °C Notes: (1)This value is rated according to Rthj-c (2)This value is rated according to Rthj-pcb (3)Pulse width limited by safe operating area (4)Starting TJ = 25 °C, ID = 18, VDD = 50 V Table 3: Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 35 °C/W Notes: (1)When mounted on FR-4 board of 1 inch², 2 oz Cu
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified) Table 4: On/off-state Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 250 µA 100 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 100 V 1 µA VDS = 100 V; TC = 125 °C 100 µA IGSS Gate body leakage current (VDS = 0) VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 55 A 4.9 6.5 mΩ Table 5: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 50 V, f = 1 MHz, VGS = 0 5117 pF Coss Output capacitance 992 pF Crss Reverse transfer capacitance 39 pF Qg Total gate charge VDD = 50 V, ID = 110 A VGS = 10 V See Figure 14: "Gate charge test circuit" 72 nC Qgs Gate-source charge 31 nC Qgd Gate-drain charge 16 nC Table 6: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 50 V, ID = 55 A, RG = 4.7 Ω, VGS= 10 V See Figure 13: "Switching times test circuit for resistive load" ns tr Rise time 36 ns td(off) Turn-off delay time 52 ns tf Fall time 21 ns
Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 110 A ISDM (1) Source-drain current (pulsed) 430 A VSD (2) Forward on voltage ISD = 55 A, VGS = 0 1.2 V trr Reverse recovery time ISD = 110 A, di/dt = 100 A/µs, VDD = 80 V, Tj = 150 °C ns Qrr Reverse recovery charge 150 nC IRRM Reverse recovery current 4.3 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance ID 100 0.1 0.1 1 VDS(V)10 (A) Operation in this area is Limited by max R DS(on) 100µs 1ms 10ms Tj=175°C Tc=25°C Single pulse AM15947v1 δ Single pulse 0.05 0.02 0.01 0.1 0.2 tp[s] Zth_280TOL
Test circuits STH110N10F7-2, STH110N10F7-6
3 Test circuits
Figure 13: Switching times test circuit for resistive load Figure 14: Gate charge test circuit Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform AM01469v1 VDD 47 kΩ 1 kΩ 47 kΩ 2.7 kΩ 1 kΩ 12 V Vi ≤ VGS 2200 μF PW I G = CONST 100 Ω 100 nF D.U.T. VG V(BR)DSS VDDVDD VD IDM ID AM01472v1 AM01473v10 VGS 90% VDS ton 90% 10% 90% 10% td(on) tr t td(off) tf 10% off
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 H2PAK-2 package information
Figure 19: H²PAK-2 outline 8159712_D
Table 8: H²PAK-2 mechanical data Dim. mm Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 7.80 L 15.30 15.80 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 M 2.6 2.9 R 0.20 0.60 V 0° 8°
Figure 20: H²PAK-2 recommended footprint 8159712_D
4.2 H2PAK-6 package information
Figure 21: H²PAK-6 outline 8159693_Rev_F
Table 9: H²PAK-6 mechanical data Dim. mm Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 10.40 H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.5 1.75 M 1.90 2.50 R 0.20 0.60 V 0° 8°
Figure 22: H²PAK-6 recommended footprint Dimensions are in mm. footprint_Rev_F
4.3 Packing information
Figure 23: Tape outline Figure 24: Reel outline A D B Full radius Tape slot In core for Tape start G measured At hub C N REEL DIMENSIONS 40 mm min. Access hole At slot location T
Table 10: Tape and reel mechanical data Tape Reel Dim. mm Dim. mm Min. Max. Min. Max. A0 10.5 10.7 A 330 B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 13.2 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 26.4 F 11.4 11.6 N 100 K0 4.8 5.0 T 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3
5 Revision history
Table 11: Document revision history Date Revision Changes 10-Dec-2012 1 Initial release. Part number (STH110N10F7-2) previously included in datasheet ID024005 16-Jul-2013 2 Modified: title Modified: IDM value in Table 2: "Absolute maximum ratings", the entire typical values in Table 5: "Dynamic", Table 6: "Switching times" and Table 7: "Source-drain diode" Minor text changes 11-Nov-2014 3 Updated: H2PAK-6 package information. Updated the title, features and description. Minor text changes. 26-Nov-2014 4 Changed from Figure 2: "Safe operating area" to Figure 12: "Source-drain diode forward characteristics".