STW10NC60 STMICROELECTRONICS | Alldatasheet

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Technical content

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET (1)ISD ≤10A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX (*) Limited only by Maximum Temperature Allowed ■ TYPICAL R DS (on) = 0.6 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH ™ II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STW10NC60 STH10NC60FI 600 V 600 V < 0.75 Ω < 0.75 Ω 10 A

10 A (*)

Symbol Parameter Value Unit STW10NC60 STH10NC60FI VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 10 10 (*) A ID Drain Current (continuous) at TC = 100°C 6.3 6.3 (*) A IDM (1) Drain Current (pulsed) 40 40 (*) A PTOT Total Dissipation at TC = 25°C 160 60 W Derating Factor 1.28 0.48 W/°C dv/dt Peak Diode Recovery voltage slope 3.5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature – 55 to 150 °C Tj Max. Operating Junction Temperature TO-247 ISOWATT218 3 1 INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-247 ISOWATT218 Rthj-case Thermal Resistance Junction-case Max 0.78 2.08 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 820 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250µA 234V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 4.5 A 0.6 0.75 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS =20 V , ID =4 . 5 A 9 S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1420 pF C oss Output Capacitance 205 pF C rss Reverse Transfer Capacitance 35 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time V DD = 300V, ID = 4.5 A R G =4 . 7Ω VGS = 10V (see test circuit, Figure 3) 20 ns tr Rise Time 16 ns Q g Total Gate Charge VDD = 480V, ID = 9.0 A, VGS = 10V 55 77 nC Q gs Gate-Source Charge 4.5 nC Q gd Gate-Drain Charge 31 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 4.5 A R G = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 9.0 A, R G = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 10 A ISDM (2) Source-drain Current (pulsed) 40 A VSD (1) Forward On Voltage ISD = 9 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 9 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 600 ns Q rr Reverse Recovery Charge 4.7 µC IRRM Reverse Recovery Current 15.5 A Safe Operating Area for ISOWATT218Safe Operating Area for TO-247

Thermal Impedance for ISOWATT218Thermal Impedance for TO-247 Static Drain-source On ResistanceTransconductance Output Characteristics Transfer Characteristics

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Capacitance VariationsGate Charge vs Gate-source Voltage Source-drain Diode Forward Characteristics

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load

DIM. mm. inch A 4.85 5.15 0.19 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 0.17 L2 18.50 0.72 L3 14.20 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º5 º V2 60º 60º Dia 3.55 3.65 0.14 0.143 TO-247 MECHANICAL DATA

DIM. mm inch A 5.35 5.65 0.211 0.222 C 3.30 3.80 0.130 0.150 D 2.90 3.10 0.114 0.122 D1 1.88 2.08 0.074 0.082 E 0.75 0.95 0.030 0.037 F 1.05 1.25 0.041 0.049 F2 1.50 1.70 0.059 0.067 F3 1.90 2.10 0.075 0.083 G 10.80 11.20 0.425 0.441 H 15.80 16.20 0.622 0.638 L 9 0.354 L1 20.80 21.20 0.819 0.835 L2 19.10 19.90 0.752 0.783 L3 22.80 23.60 0.898 0.929 L4 40.50 42.50 1.594 1.673 L5 4.85 5.25 0.191 0.207 L6 20.25 20.75 0.797 0.817 N 2.1 2.3 0.083 0.091 R 4.6 0.181 DIA 3.5 3.7 0.138 0.146 P025C/A ISOWATT218 MECHANICAL DATA - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm

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