STGFW80V60F STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 19

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 4.1 TO-3PF, STGFW80V60F
  • 4.2 TO-247, STGW80V60F
  • 4.3 TO-3P, STGWT80V60F
  • 5 Revision history

Features

  • Maximum junction temperature: TJ = 175 °C
  • Tail-less switching off
  • VCE(sat) = 1.85 V (typ.) @ IC = 80 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance

Applications

  • Photovoltaic inverters
  • Uninterruptible power supply
  • Welding
  • Power factor correction
  • Very high frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2 or TAB) G (1) E (3) TO-247 TO-3P TAB 111 TO-3PF Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current level is limited by bond wires.
  2. Pulse width limited by ma ximum junction temperature.

Table 3. Thermal data

2 Electrical characteristics

TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Table 5. Dynamic characteristics

Table 6. Switching characteristics (inductive load)

  1. Energy loss include reverse recovery of the external diode. The diode is the same of the co-packed
  2. Turn-off losses include also the tail of the collector current.

2.1 Electrical characteristics (curves)

Figure 2. Power dissipation vs. case Figure 3. Collector current vs. case temperature Figure 4. Power dissipation vs. case Figure 5. Collector current vs. case temperature Figure 6. Output characteristics (TJ = 25°C) Figure 7. Output characteristics (T J = 175°C)

Figure 8. VCE(sat) vs. junction temperature Figure 9. V CE(sat) vs. collector current Figure 10. Collector current vs. switching Figure 11. Collector current vs. switching Figure 12. Forward bias safe operating area for Figure 13. Forward bias safe operating area for

20 IC(A)

11 VCE(V)

Figure 14. Normalized VGE(th) vs junction Figure 15. Normalized V(BR)CES vs. junction Figure 16. Capacitance variation Figure 17. Gate charge vs. gate-emitter voltage Figure 18. Switching loss vs collector current Figure 19. Switching loss vs gate resistance

100 VCE(V)

0 Qg(nC)

0 IC(A)

0 RG(Ω)

Figure 20. Switching loss vs temperature Figure 21. Switching loss vs collector-emitter Figure 22. Switching times vs. collector current Figure 23. Switching times vs. gate resistance Figure 24. Transfer characteristics

1000 TJ(°C)

10 RG(Ω)

67 VGE(V)

3 Test circuits

Figure 27. Test circuit for inductive load Figure 28. Gate charge test circuit Figure 29. Switching waveform

4 Package mechanical data

specifications, grade definitions and product status are available at: www.st.com.

4.1 TO-3PF, STGFW80V60F

Figure 30. TO-3PF drawing

Table 7. TO-3PF mechanical data

4.2 TO-247, STGW80V60F

Figure 31. TO-247 drawing

Table 8. TO-247 mechanical data

4.3 TO-3P, STGWT80V60F

Figure 32. TO-3P drawing

Table 9. TO-3P mechanical data

5 Revision history

Table 10. Document revision history 22-May-2014 1 Initial release.