STGF7NB60SL_0409 STMICROELECTRONICS | Alldatasheet
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Table 3: Absolute Maximum ratings (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: Off Table 6: On Symbol Parameter Value Symbol VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at 25°C1 5 A IC Collector Current (continuous) at 100°C7 A ICM (1) Collector Current (pulsed) 20 A PTOT Total Dissipation at TC = 25°C 25 W Derating Factor 0.2 W/ °C VISO Insulation Withstand Voltage A.C. 2500 V Tstg Storage Temperature – 55 to 150 °C Tj Operating Junction Temperature Rthj-case Thermal Resistance Junction-case Max 5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Symbol Parameter Test Conditions Min. Typ. Max. Unit VBR(CES) Collectro-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 600 V VBR(ECS) Emitter-Collector Breakdown Voltage IC = 1mA, VGE = 0 20 V ICES Collector-Emitter Leakage Current (VCE = 0) VGE = Max Rating Tc =25°C Tc=125°C 100 µA µA IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20 V , VCE = 0 ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGE(th) Gate Threshold Voltage V CE = VGE , IC = 250 µA 1.2 2.4 V VCE(SAT) Collector-Emitter Saturation Voltage VGE =4.5 V, IC = 7A, Tj= 25°C VGE =4.5 V, IC = 7A, Tj= 125°C 1.2 1.1 1.6 V V
ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Switching On Table 9: Switching Off ()Turn-off losses include also the tail of the collector current. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE = 15 V, IC = 7 A 5 S C ies C oes C res Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 25V, f = 1 MHz, VGE = 0 800 pF pF pF Q g Q ge Q gc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 7 A, VGE = 5V (see Figure 20) 2.5 8.5 22 nC nC nC ICL Turn-Off SOA Minimum Current Vclamp = 480 V , Tj = 125°C R G = 1 KΩ, VGE =5V 20 A tscw Short Circuit Withstand Time V ce = 0.5 VBR(CES) , VGE =5V , Tj = 125°C , RG = 1KΩ 14 µs Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Current Rise Time VCC = 480 V, IC = 7 A RG =1K Ω , VGE = 5 V (see Figure 18) 1.1 0.25 µs µs (di/dt)on Eon Turn-on Current Slope Turn-on Switching Losses VCC = 480 V, IC = 7 A RG =1K Ω VGE = 5 V,Tj = 125°C 2.7 A/µs mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit tc Cross-over Time Vcc = 480 V, IC = 7 A, R GE = 1KΩ , VGE = 5 V (see Figure 18) 2.7 µs tr(Voff) Off Voltage Rise Time 1.6 µs td(off) Delay Time 5.2 µs tf Current Fall Time 1.1 µs Eoff() Turn-off Switching Loss 4.1 m J tc Cross-over Time Vcc = 480 V, IC = 7 A, R GE = 1KΩ , VGE = 5 V Tj = 125 °C (see Figure 18) 4.4 µs tr(Voff) Off Voltage Rise Time 2.4 µs td(off) Delay Time 6.4 µs tf Fall Time 1.7 µs Eoff(**) Turn-off Switching Loss 7.1 m J
Table 10: Revision History Date Revision Description of Changes 04-June-2004 2 Stylesheet update. No content change 02-Sep-2004 3 Datasheet updated, see table1
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