STGF4M65DF2 STMICROELECTRONICS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 16
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP package information
- 5 Revision history
Features
6 µs of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 4 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode
Applications
Motor control UPS PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGF4M65DF2 G4M65DF2 TO-220FP Tube TO-220FP C (2) G (1) E (3) Sc12850_no_tab
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC(1) Continuous collector current at TC = 25 °C 8 A Continuous collector current at TC = 100 °C 4 A ICP(2) Pulsed collector current 16 A VGE Gate-emitter voltage ±20 V IF(1) Continuous forward current at TC = 25 °C 8 A Continuous forward current at TC = 100 °C 4 A IFP(2) Pulsed forward current 16 A VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s, TC= 25 °C) 2.5 kV PTOT Total dissipation at TC = 25 °C 23 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature range - 55 to 175 °C Notes: (1)Limited by maximum junction temperature. (2)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 6.5 °C/W RthJC Thermal resistance junction-case diode 7 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W
2 Electrical characteristics
TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 250 µA 650 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 4 A 1.6 2.1 V VGE = 15 V, IC = 4 A, TJ = 125 °C 1.9 VGE = 15 V, IC = 4 A, TJ = 175 °C 2.1 VF Forward on-voltage IF = 4 A 1.9 V IF = 4 A, TJ = 125 °C 1.7 IF = 4 A, TJ = 175 °C 1.6 VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 5 6 7 V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ± 20 V ±250 µA Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V - 369 - pF Coes Output capacitance - 24.8 - Cres Reverse transfer capacitance - 8 - Qg Total gate charge VCC = 520 V, IC = 4 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") - 15.2 - nC Qge Gate-emitter charge - 3 - Qgc Gate-collector charge - 7 -
Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω (see Figure 29: " Test circuit for inductive load switching") 12 - ns tr Current rise time 6.9 - ns (di/dt)on Turn-on current slope 480 - A/µs td(off) Turn-off-delay time 86 - ns tf Current fall time 120 - ns Eon(1) Turn-on switching energy 0.040 - mJ Eoff(2) Turn-off switching energy 0.136 - mJ Ets Total switching energy 0.176 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") 11.6 - ns tr Current rise time 8 - ns (di/dt)on Turn-on current slope 410 - A/µs td(off) Turn-off-delay time 85 - ns tf Current fall time 211 - ns Eon(1) Turn-on switching energy 0.067 - mJ Eoff(2) Turn-off switching energy 0.210 - mJ Ets Total switching energy 0.277 - mJ tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - µs Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 4 A, VR = 400 V, VGE = 15 V, di/dt = 800 A/µs (see Figure 29: " Test circuit for inductive load switching") - 133 - ns Qrr Reverse recovery charge - 140 - nC Irrm Reverse recovery current - 5 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 520 - A/µs Err Reverse recovery energy - 15 - µJ trr Reverse recovery time IF = 4 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, di/dt = 800 A/µs (see Figure 29: " Test circuit for inductive load switching") - 236 - ns Qrr Reverse recovery charge - 370 - nC Irrm Reverse recovery current - 6.6 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 378 - A/µs Err Reverse recovery energy - 32 - µJ
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current
3 Test circuits
Figure 29: Test circuit for inductive load switching Figure 30: Gate charge test circuit Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform A A C E G B RG+ G C 3.3 µF 1000 µF L=100 µH VCC E D.U.T B AM015 04v1 t AM01507v1 10% VRRM dv/dt di/dt IRRM IF trr ts tf Qrr IRRM
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220FP package information
Figure 33: TO-220FP package outline
Table 8: TO-220FP package mechanical data Dim. mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2
5 Revision history
Table 9: Document revision history Date Revision Changes 25-Nov-2015 1 First release. 18-Apr-2016 2 Modified: features in cover page. Modified: Table 2: "Absolute maximum ratings", Table 3: "Thermal data", Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)" Added: Section 2.1: "Electrical characteristics (curves)". Minor text changes 13-Jul-2016 3 Document status promoted from preliminary to production data. 21-Nov-2016 4 Updated Figure 1: "Internal schematic diagram" Updated Table 2: "Absolute maximum ratings" Updated Figure 25: "Reverse recovery charge vs. diode current slope" Minor text changes