STG25H120F2D7 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Datasheet sections

  • 1 Mechanical parameters
  • 2 Electrical ratings
  • 3 Chip layout
  • 4 Additional information
  • 4.1 Additional testing and screening
  • 4.2 Shipping
  • 4.3 Handling
  • 4.4 Wafer/die storage
  • 5 Revision history

Features

  • 5 µs of short-circuit withstand time
  • Low VCE(sat) = 2.1 V (typ.) at IC = 25 A
  • Tight parameter distribution
  • Low switching-off losses
  • Safer paralleling

Applications

  • Welding
  • UPS
  • Industrial drives
  • Photovoltaic inverter

Description

This die is an IGBT developed using an advanced proprietary trench gate and field-stop structure. This device is a part of the H2 series IGBTs. Table 1. Device summary

1 Mechanical parameters

Table 2. Mechanical parameters

2 Electrical ratings

Table 3. Absolute maximum ratings (TJ = 25 °C, unless otherwise specified)

  1. Depending on thermal properties of assembly .
  2. Pulse width limited by maximum junction temperature.
  3. Not tested at chip level, verified by design/characterization.

Table 4. Static characteristics (tested on wafer unless otherwise specified)

Table 5. Electrical characteristics (1)

  1. Value are referred to packaged device STGW25H120DF2 with specific test circuit.

Table 6. Switching characteristics(1) on inductive load

  1. Values are strongly dependent on package/module design and mounting technology. These value are

STGW25H120DF2 datasheet for more information.

3 Chip layout

Figure 1. Die drawing and dimensions(a) Table 7. Die delivery plastic envelope sealed under vacuum. package is 5, weight is about 3.7 Kg.

Additional information STG25H120F2D7

4 Additional information

4.1 Additional testing and screening

For customers requiring products supplied as known good die (KGD) or requiring specific die level testing, please contact the local ST sales office.

4.2 Shipping

Several shipping options are offered, consult the local ST sales office for availability:

  • Die on film sticky foil - suffix on sales type D7
  • Carrier tape - suffix on sales type D8+KGD

4.3 Handling

  • Products must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as defined in MIL-HDBK-263.
  • Products must be handled only in a class 1000 or better-designated clean room environment.
  • Singular dice are not to be handled with tweezers. A vacuum wand with a non-metallic ESD protected tip should be used.

4.4 Wafer/die storage

Once opened, the wafer must be stored in a dry, inert atmosphere, such as nitrogen. Optimum temperature for storage is 18 °C ± 2 °C with as few variations as possible to avoid parasitic polymerization of the adhesive. Sawn wafers must be processed within 12 weeks after receipt by customer. After the customer opens the package, the customer is responsible for the products.

5 Revision history

Table 8. Document revision history 08-May-2015 1 Initial release.