Datasheet - STFW69N65M5, STW69N65M5 - N‑channel 650 V, 37 mΩ typ., 58 A MDmesh M5 Power MOSFETs in a TO-3FP and TO-247 packages
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 17
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-3PF type A package information
- 4.2 TO-3PF type B package information
- 4.3 TO-247 package information
Features
Order code VDS RDS(on) max. ID STFW69N65M5
650 V 45 mΩ 58 A
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Extremely low RDS(on)
- 100% avalanche tested
Applications
- Switching applications
Description
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. 1 1 1 TO-3PF TO-247 AM01475v1_noZen D(2, TAB) G(1) S(3) Product status links STFW69N65M5 STW69N65M5 Product summary Order code STFW69N65M5 Marking 69N65M5 Package TO-3FP Packing Tube Order code STW69N65M5 Marking 69N65M5 Package TO-247 Packing Tube N‑channel 650 V, 37 mΩ typ., 58 A MDmesh M5 Power MOSFETs in a TO-3FP and TO-247 packages STFW69N65M5, STW69N65M5 Datasheet DS8936 - Rev 3 - August 2025 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off states
- Specified by design, not tested in production.
Table 5. Dynamic
- Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated
- Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated
Table 6. Switching times
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-3PF Figure 2. Normalized transient thermal impedance Figure 3. Safe operating area for TO-247 Figure 4. Normalized transient thermal impedance Figure 5. Typical output characteristics Figure 6. Typical transfer characteristics
Figure 7. Typical gate charge characteristics Figure 8. Typical capacitance characteristics Figure 9. Typical drain-source on-resistance
0 ID (A)
Figure 10. Typical output capacitance stored energy Figure 11. Normalized gate threshold voltage vs Figure 12. Normalized on-resistance vs temperature
3 Test circuits
Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior Figure 18. Test circuit for inductive load switching and Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-3PF type A package information
Figure 22. TO-3PF type A package outline
Package information
Table 8. TO-3PF type A mechanical data
4.2 TO-3PF type B package information
Figure 23. TO-3PF type B package outline
Table 9. TO-3PF type B mechanical data
4.3 TO-247 package information
Figure 24. TO-247 package outline
Table 10. TO-247 package mechanical data
Revision history
Table 11. Document revision history 27-Feb-2012 1 First release. Modified: note 3 of Table 2, values in Table 4, typ. values in Table 6, 7 and 8. Updated Section 4: Package information.
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