Datasheet - STFW4N150, STP4N150, STW4N150 - N-channel 1500 V, 6 Ω typ., 4 A, PowerMESH Power MOSFET in TO-220, TO-247 and TO-3PF packages
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 23
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-3PF type A package information
- 4.2 TO-3PF type B package information
- 4.3 TO-220 type A package information
- 4.4 TO-220 type H package information
- 4.5 TO-247 package information
- 5 Ordering information
Features
- 100% avalanche tested
- Intrinsic capacitances and Qg minimized
- High speed switching
- Fully isolated TO-3PF plastic package
Applications
- Switching applications
Description
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. 1 1 1 TO-3PF TO-247 1 23 TAB TO-220 AM01475v1_noZen D(2, TAB) G(1) S(3) Product status links STFW4N150 STP4N150 STW4N150 N-channel 1500 V, 6 Ω typ., 4 A, PowerMESH Power MOSFET in TO-220, TO-247 and TO-3PF packages STFW4N150, STP4N150, STW4N150 Datasheet DS4257 - Rev 10 - November 2023 For further information contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Limited by maximum junction temperature.
- Pulse width limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 4. Static
- Specified by design, not tested in production.
Table 5. Dynamic
- Specified by design, not tested in production.
Table 6. Switching times Figure 22. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-3PF Figure 2. Normalized transient thermal impedance for Figure 3. Safe operating area for TO-220 Figure 4. Normalized transient thermal impedance for Figure 5. Safe operating area for TO-247 Figure 6. Normalized transient thermal impedance for
3 Test circuits
Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior Figure 19. Test circuit for inductive load switching and Figure 20. Unclamped inductive load test circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. STFW4N150, STP4N150, STW4N150
Package information
4.1 TO-3PF type A package information
Figure 23. TO-3PF type A package outline
Table 8. TO-3PF type A mechanical data
4.2 TO-3PF type B package information
Figure 24. TO-3PF type B package outline
Table 9. TO-3PF type B mechanical data
4.3 TO-220 type A package information
Figure 25. TO-220 type A package outline
Table 10. TO-220 type A package mechanical data
4.4 TO-220 type H package information
Figure 26. TO-220 type H package outline
Table 11. TO-220 type H package mechanical data
4.5 TO-247 package information
Figure 27. TO-247 package outline
Table 12. TO-247 package mechanical data
5 Ordering information
Table 13. Order codes
Ordering information
DS4257 - Rev 10 page 20/23
Revision history
Table 14. Document revision history Modified Features and Description on cover page. Modified Table 4. Static, Table 5. Dynamic and Table 7. Source-drain diode. characteristics and Figure 16. Maximum avalanche energy vs temperature. Updated Section 4 Package information.
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