STF40N60M2_V01 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 18

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package information
  • 4.1 TO-220FP , package information
  • 4.2 I 2PAKFP (TO-281) package information
  • 4.3 TO-3PF, package information
  • 5 Revision history

Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Applications

  • Switching applications
  • LLC converters, resonant converters

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM01476v1 I2PAKFP (TO-281)TO-220FP TO-3PF 1 2 3 Order codes V DS @ TJmax RDS(on) max I D STF40N60M2 650 V 0.088 Ω 34 ASTFI40N60M2 STFW40N60M2 Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Limited by maximum junction temperature
  2. Pulse width limited by safe operating area.

Table 3. Thermal data Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On /off states

  1. Defined by design, not subject to production test

Table 6. Dynamic

  1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS

Table 7. Switching times Table 8. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP and Figure 3. Thermal impedance for TO-220FP and Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF Figure 6. Output characteristics Figure 7. Transfer characteristics

Figure 14. Normalized V(BR)DSS vs temperature Figure 15. Source-drain diode forward vs

0 ISD(A)

1 TJ= -50°C

3 Test circuits

Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-220FP , package information

Figure 22. TO-220FP package outline

Table 9. TO-220FP mechanical data

4.2 I 2PAKFP (TO-281) package information

Figure 23. I2PAK(TO-281) package outline

Table 10. I2PAKFP (TO-281) package mechanical data

4.3 TO-3PF, package information

Figure 24. TO-3PF package outline

Table 11. TO-3PF package mechanical data

5 Revision history

Table 12. Document revision history previously included in datasheet DocID024932. Updated title in cover page. states,Table 6: Dynamic and Table 8: Source drain diode.