STF20N65M5_V01 STMICROELECTRONICS | Alldatasheet
Document overview
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- PDF pages: 18
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curve)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP package information
- 4.2 I²PAKFP (TO-281) package information
- 4.3 TO-3PF package information
- 5 Revision history
Features
Order code VDS @ TJmax RDS(on) max ID STF20N65M5 710 V 0.190 Ω 18 A STFI20N65M5 STFW20N65M5 Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested
Applications
Switching applications
Description
These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well- known PowerMESH™ horizontal layout. The resulting products offer extremely low on- resistance, making them particularly suitable for applications requiring high power and superior efficiency. Table 1: Device summary Order code Marking Package Packaging STF20N65M5 20N65M5 TO-220FP Tube STFI20N65M5 I²PAKFP (TO-281) STFW20N65M5 TO-3FP TO-3PF I2PAKFP (TO-281) TO-220FP AM01475v1_noZen_noTab D(2) G(1) S(3)
1 Electrical ratings
Table 2: Absolute maximum ratings Symbol Parameter Value Unit TO-220FP, I²PAKFP TO-3PF VGS Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 18(1) A ID Drain current (continuous) at TC = 100 °C 11.3(1) A IDM (2) Drain current (pulsed) 36(1) A PTOT Total dissipation at TC = 25 °C 30 48 W dv/dt (3) Peak diode recovery voltage slope 15 V/ns VISO(4) Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 3500 V Tstg Storage temperature range - 55 to 150 °C Tj Operating junction temperature range Notes: (1)Limited by maximum junction temperature. (2)Pulse width limited by safe operating area (3)ISD ≤ 18 A, di/dt = 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V (4)VDS ≤ 520 V Table 3: Thermal data Symbol Parameter Value Unit TO-220FP, I²PAKFP TO-3PF Rthj-case Thermal resistance junction-case 4.17 2.6 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 50 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax ) 4 °C/W EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 270 mJ
2 Electrical characteristics
(TC = 25 °C unless otherwise specified) Table 5: On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0, ID = 1 mA 650 V IDSS Zero gate voltage drain current VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C (1) 100 µA IGSS Gate-body leakage current VDS = 0, VGS = ± 25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 9 A 0.160 0.190 Ω Notes: (1)Defined by design, not subject to production test Table 6: Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0, VDS = 100 V, f = 1 MHz - 1434 - pF Coss Output capacitance - 38 - pF Crss Reverse transfer capacitance - 3.7 - pF Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 118 - pF Co(er)(2) Equivalent capacitance energy related - 35 - pF RG Intrinsic gate resistance f = 1 MHz, ID=0 A - 3.5 - Ω Qg Total gate charge VDD = 520 V, ID = 9 A, VGS = 0 to 10 V (see Figure 18: "Test circuit for gate charge behavior") - 36 - nC Qgs Gate-source charge - 7.5 - nC Qgd Gate-drain charge - 18 - nC Notes: (1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. (2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 7: Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(V) Voltage delay time VDD = 400 V, ID = 12 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19: "Test circuit for inductive load switching and diode recovery times" and Figure 22: "Switching time waveform") - 43 - ns tr(V) Voltage rise time - 7.5 - ns tf(i) Current fall time - 7.5 - ns tc(off) Crossing time - 11.5 - ns Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 18 A ISDM(1) Source-drain current (pulsed) 36 A VSD(2) Forward on voltage ISD = 18 A, VGS = 0 - 1.5 V trr Reverse recovery time ISD = 18 A, di/dt = 100 A/µs VDD = 100 V (see Figure 19: "Test circuit for inductive load switching and diode recovery times") - 288 ns Qrr Reverse recovery charge - 4 µC IRRM Reverse recovery current - 27 A trr Reverse recovery time ISD = 18 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 19: "Test circuit for inductive load switching and diode recovery times") - 342 ns Qrr Reverse recovery charge - 4.7 µC IRRM Reverse recovery current - 28 A Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2.1 Electrical characteristics (curve)
Figure 2: Safe operating area for TO-220FP and I²PAKFP Figure 3: Thermal impedance for for TO-220FP and I²PAKFP Figure 4: Safe operating area for TO-3PF Figure 5: Thermal impedance for TO-3PF Figure 6: Output characteristics Figure 7: Tranfer characteristics d 0.05 0.02 0.01 0.1 0.2
STF20N65M5,STFI20N65M5,STFW20N65M5 Test circuits
3 Test circuits
Figure 17: Test circuit for resistive load switching times Figure 18: Test circuit for gate charge behavior Figure 19: Test circuit for inductive load switching and diode recovery times Figure 20: Unclamped inductive load test circuit Figure 21: Unclamped inductive waveform Figure 22: Switching time waveform AM05540v2_for_M5
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 TO-220FP package information
Figure 23: TO-220FP package outline
Table 9: TO-220FP package mechanical data Dim. mm Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2
4.2 I²PAKFP (TO-281) package information
Figure 24: I²PAKFP (TO-281) package outline 8291506 Re v. C
Table 10: I²PAKFP (TO-281) mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 1.20 G 4.95 5.20 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.50 7.60 7.70
4.3 TO-3PF package information
Figure 25: TO-3PF package outline
Table 11: TO-3PF mechanical data Dim. mm Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 5.45 H 15.30 15.70 L 9.80 10 10.20 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80
5 Revision history
Table 12: Document revision history Date Revision Changes 01-Feb-2013 1 First release. Part numbers previously included in datasheet DM00049308 21-Jul-2016 2 Added device in TO-3PF. Modified: Table 2: "Absolute maximum ratings", Table 5: "On /off states". Modified: Figure 2: "Safe operating area for TO-220FP and I²PAKFP", Figure 4: "Safe operating area for TO-3PF", Figure 5: "Thermal impedance for TO-3PF". Minor text changes 22-Mar-2017 3 Modified Table 2: "Absolute maximum ratings", Table 8: "Source drain diode". Modified Figure 2: "Safe operating area for TO-220FP and I²PAKFP", Figure 4: "Safe operating area for TO-3PF", Figure 12: "Normalized gate threshold voltage vs temperature ", Figure 13: "Normalized on- resistance vs temperature" and Figure 14: "Source-drain diode forward characteristics ". Minor text changes.