Datasheet - STFW1N105K3 - N‑channel 1050 V, 8 Ω typ., 1.4 A MDmesh K3 Power MOSFET in a TO-3PF package
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 15
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-3PF type A package information
- 4.2 TO-3PF type B package information
Features
Order code VDS RDS(on) max. ID STFW1N105K3 1050 V 11 Ω 1.4 A
- Extremely large avalanche performance
- Minimized gate charge
- Very low intrinsic capacitance
- 100% avalanche tested
Applications
- Switching applications
Description
This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. TO-3PF AM01475v1_noZen D(2, TAB) G(1) S(3) Product status link STFW1N105K3 Product summary Order code STFW1N105K3 Marking 1N105K3 Package TO-3PF Packing Tube N‑channel 1050 V, 8 Ω typ., 1.4 A MDmesh K3 Power MOSFET in a TO-3PF package STFW1N105K3 Datasheet DS9204 - Rev 3 - August 2025 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off states
- Specified by design, not tested in production.
Table 5. Dynamic
- Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times Figure 19. Switching time waveform)
Electrical characteristics
Table 7. Source-drain diode
- Pulse width limited by safe operating area.
- Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance Figure 3. Typical output characteristics Figure 4. Typical transfer characteristics Figure 5. Typical gate charge characteristics
0 Q g (nC)
Figure 6. Typical capacitance characteristics
Figure 7. Typical drain-source on-resistance Figure 8. Typical output capacitance stored energy
0 V DS (V)
Figure 9. Normalized gate threshold vs temperature Figure 10. Normalized on-resistance vs temperature Figure 11. Normalized breakdown voltage vs temperature Figure 12. Typical reverse diode forward characteristics
Figure 13. Maximum avalanche energy vs temperature
3 Test circuits
Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior Figure 16. Test circuit for inductive load switching and Figure 17. Unclamped inductive load test circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-3PF type A package information
Figure 20. TO-3PF type A package outline
Package information
Table 8. TO-3PF type A mechanical data
4.2 TO-3PF type B package information
Figure 21. TO-3PF type B package outline
Table 9. TO-3PF type B mechanical data
Revision history
Table 10. Document revision history 13-Aug-2012 1 First release. 23-Jan-2013 2 Added device in TO-3PF. Removed order code STF1N105K3 and STP1N105K3. Updated Section 4: Package information.
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