Datasheet - STF12N120K5, STFW12N120K5 - N-channel 1200 V, 620 mΩ typ. 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages
Document overview
- Manufacturer or author: STMICROELECTRONICS
- PDF pages: 17
Technical content
Datasheet sections
- 1 Electrical ratings
- 2 Electrical characteristics
- 2.1 Electrical characteristics (curves)
- 3 Test circuits
- 4 Package information
- 4.1 TO-220FP type B package information
- 4.2 TO-3PF type A package information
- 4.3 TO-3PF type B package information
Features
Order code VDS RDS(on) max. ID STF12N120K5
1200 V 690 mΩ 12 A
- Very low FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. TO-220FP 1 1 1 TO-3PF D(2, TAB) G(1) S(3) AM01476v1_tab Product status links STF12N120K5 STFW12N120K5 Product summary Order code STF12N120K5 Marking 12N120K5 Package TO-220FP Packing Tube Order code STFW12N120K5 Marking 12N120K5 Package TO-3PF Packing Tube N-channel 1200 V, 620 mΩ typ. 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages STF12N120K5, STFW12N120K5 Datasheet DS10355 - Rev 3 - September 2025 For further information, contact your local STMicroelectronics sales office.
1 Electrical ratings
Table 1. Absolute maximum ratings
- Pulse width is limited by safe operating area.
Table 2. Thermal data Table 3. Avalanche characteristics
2 Electrical characteristics
TC = 25 °C unless otherwise specified. Table 4. On/off-states
- Specified by design, not tested in production.
Table 5. Dynamic characteristics
- Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
- Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
Table 6. Switching times
Electrical characteristics
Table 7. Source-drain diode
- Pulse width is limited by safe operating area.
- Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220FP Figure 2. Normalized transient thermal impedance for Figure 3. Safe operating area for TO-3PF Figure 4. Normalized transient thermal impedance for Figure 5. Typical output characteristics Figure 6. Typical transfer characteristics
Figure 13. Typical output capacitance stored energy Figure 14. Typical reverse diode forward characteristics
4 ISD (A)
Figure 15. Maximum output capacitance stored energy
3 Test circuits
Figure 16. Test circuit for resistive load switching times Figure 17. Test circuit for gate charge behavior Figure 18. Test circuit for inductive load switching and Figure 19. Unclamped inductive load test circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
4 Package information
To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark.
4.1 TO-220FP type B package information
Figure 22. TO-220FP type B package outline
Package information
Table 8. TO-220FP type B package mechanical data DS10355 - Rev 3 page 10/17
4.2 TO-3PF type A package information
Figure 23. TO-3PF type A package outline DS10355 - Rev 3 page 11/17
Table 9. TO-3PF type A mechanical data DS10355 - Rev 3 page 12/17
4.3 TO-3PF type B package information
Figure 24. TO-3PF type B package outline DS10355 - Rev 3 page 13/17
Table 10. TO-3PF type B mechanical data DS10355 - Rev 3 page 14/17
Revision history
Table 11. Document revision history Updated title, features and description. Updated Table 4.: On/off states and Table 5.: Dynamic. Updated Section 4: Package information.
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